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Search Publications by: Dean G. Jarrett (Fed)

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Displaying 101 - 125 of 178

Procedures for the Traceability of High Resistance Standards Using a Teraohmmeter

August 1, 2008
Author(s)
Dean G. Jarrett, Marlin E. Kraft, Isabel Castro, Brett Degler, Mark Evans
The Metrology of the Ohm Project in the Quantum Electrical Metrology Division (QEMD) at the National Institute of Standards and Technology (NIST) routinely disseminates the U. S. representation of the ohm through our calibration services and measurement

AUTOMATION OF 1 TOhm TO 100 TOhm ULTRA-HIGH RESISTANCE MEASUREMENTS AT NIST

June 1, 2008
Author(s)
Dean G. Jarrett, Angelica M. Muniz-Mercado, Marlin E. Kraft
The automation of ultra-high resistance measurements at the National Institute of Standards and Technology (NIST) in the range 1 TOhm to 100 TOhm has been completed with the use of a programmable XY positioning system to facilitate the guarded connection

SIM COMPARISON OF DC RESISTANCE AT 1 Ohm, 1 MOhm, AND 1 GOhm

June 1, 2008
Author(s)
Dean G. Jarrett, Randolph Elmquist, Nien F. Zhang, Alejandra Tonina, Janice Fernandes, Daniel Izquierdo, Dave Inglis, Felipe Hernandez-Marquez
A regional comparison of DC resistance standards at the nominal values of 1 Ohm, 1 MOhm, and 1 GOhm has recently been completed in the System Interamericano de Metrogia (SIM) region. The motivation, design, standards, and results of this regional

Settling Times of High-Value Standard Resistors

June 1, 2004
Author(s)
Dean G. Jarrett, Randolph Elmquist
An investigation of the response of high-value resistance standards and elements to applied potential has showed that the processes used to prepare and construct high-value resistance standards can effect the settling times of these standards. Improvements

Tech Note 1458|NIST Measurement Service for DC Standard Resistors

March 8, 2004
Author(s)
Randolph Elmquist, Dean G. Jarrett, George R. Jones Jr., Marlin E. Kraft, Scott H. Shields, Ronald F. Dziuba
At the National Institute of Standards and Technology (NIST), the U.S. representation of the ohm is based on the quantum Hall effect, and it is maintained and disseminated at various resistance levels by working reference groups of standards. This document

A Bridge for Scaling to Higher Resistance from the QHR

August 21, 2003
Author(s)
Randolph Elmquist, Dean G. Jarrett
A two-terminal bridge for resistance scaling directly from the quantum Hall resistance (QHR) to higher-resistance values now provides a secondary starting point in decade scaling at NIST, beginning at the 1 M(Ohm) resistance level. This cryogenic bridge

CCEM-K2 Key Comparison of 10 Mohm and 1 Gohm Resistance Standards

April 1, 2003
Author(s)
Dean G. Jarrett, Ronald F. Dziuba
An international comparison of dc resistance at 10 Mohm and 1 Gohm was organized under the auspices of the Consultative Committee for Electricity and Magnetism (CCEM) and piloted by the National Institute of Standards and Technology (NIST) with 14 other

Statistical Uncertainty Analysis of Key Comparison CCEM-K2

April 1, 2003
Author(s)
Nien F. Zhang, N Sedransk, Dean G. Jarrett
The details of a statistical uncertainty analysis applied to key comparison CCEM-K2 are reported. The analysis presented here provides an approach for addressing known correlations which have been of concern in reporting key comparison results

A 10T Mohm Per Step Hamon Transfer Standard

June 1, 2002
Author(s)
Dean G. Jarrett
To evaluate high resistance measurements and scaling in the range 1 Tohm to 100 Tohm, a 10 Tohm per step Hamon transfer standard is being developed. The design uses fabrication techniques developed in recent years at NIST to construct high resistance

Key Comparisons for Dummies: Lessons Learned

June 1, 2002
Author(s)
Dean G. Jarrett
This paper will discuss some of the challenges encountered during a recent key comparison. From these experiences, general lessons will be drawn that should prove useful both for the consultative committees and for future pilot laboratories as they