U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Michael Gaitan (Assoc)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 226 - 250 of 327

Optimization of CMOS MEMS Microwave Power Sensors

August 1, 1999
Author(s)
V. Milanovic, M. Hopcroft, C. A. Zincke, Michael Gaitan, Mona E. Zaghloul
Micromachined power sensors with operation up to 50 GHz were recently achieved in CMOS technology. to improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the

MEMS-Based Test Structures for IC Technology

December 31, 1998
Author(s)
S. A. Smee, Michael Gaitan, Yogendra K. Joshi, David L. Blackburn
As Integrated Circuit (IC) device sizes shrink, intrinsic and thermo-mechanical stress in interconnects is an ever increasing reliability concern. Increasing device density leads to more interconnect layers and hence, greater probability of stress related

Convective Accelerometer and Tilt Sensor in CMOS Technology

November 12, 1998
Author(s)
V. Milanovic, E. D. Bowen, N. H. Tea, Michael Gaitan, Mona E. Zaghloul
This paper describes a CMOS implementation of novel ID and 2D accelerometers that operate based on heat convection, requiring no solid proof mass. The devices consist of micromachined microheaters and thermocouple sensors separated by a gap and placed in

Characterization of Broad-Band Transmission for Coplanar Waveguides on CMOS Silicon Substrates

May 1, 1998
Author(s)
V. Milanovic, Mehmet Ozgur, Donald C. DeGroot, Jeffrey Jargon, Michael Gaitan, Mona E. Zaghloul
This paper presents characteristics of microwave transmission in coplanar waveguides (CPW's) on silicon (Si) substrates fabricated through commercial CMOS foundries. Due to the CMOS fabrication, the metal strips of the CPW are encapsulated in thin films of