Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Optimization of CMOS MEMS Microwave Power Sensors

Published

Author(s)

V. Milanovic, M. Hopcroft, C. A. Zincke, Michael Gaitan, Mona E. Zaghloul

Abstract

Micromachined power sensors with operation up to 50 GHz were recently achieved in CMOS technology. to improve their sensitivity and signal-to-noise ratio, while maintaining microwave performance, several design parameters must be considered, such as the number and placement of thermocouples. This paper presents experimental and analytical thermal characterization of the sensors, which provides insight into the proper adjustment of the layout parameters. Experimental results were obtained by indirect measurements of the sensor temperature distribution under various applied power conditions. A simple and approximate model was developed, and adjusted based on experimental results, which was then used to show the effects of the variations in layout parameters on the overall device sensitivity. The model includes thermoelectric Peltier and Thomson effects.
Proceedings Title
Proc., 1999 International Symposium on Circuits and Systems
Conference Dates
May 30-June 2, 1999
Conference Location
Orlando, FL, USA

Keywords

CMOS, MEMS, MOSIS, micromachined, sensors, thermocouple

Citation

Milanovic, V. , Hopcroft, M. , Zincke, C. , Gaitan, M. and Zaghloul, M. (1999), Optimization of CMOS MEMS Microwave Power Sensors, Proc., 1999 International Symposium on Circuits and Systems, Orlando, FL, USA (Accessed May 30, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 31, 1999, Updated October 12, 2021