Publications

Displaying 126 - 150 of 176

Threading dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire With a GaN Buffer Layer

October 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, H Lu, J Schaff

The density and types of dislocations in InN thin films grown on (0001) sapphire with a GaN buffer layer were characterized by transmission electron microscopy. Perfect edge threading dislocations (TDs) with 1/3 Burgers vectors are predominant defects

Transmission Electron Microscopy Study of Ruddlesden-Popper Ca n+1 Mn n 0 3n+1 n = 2 and 3 Compounds

September 1, 2003

Author(s)

Leonid A. Bendersky, M Greenblatt, R Chen

Two Ruddlesden-Popper compounds Can+1MnnO3n (+ 1) with n = 2 and 3 synthesized by a citrate gel technique have been studied by TEM. The structure of Ca4Mn3O10 is consistent with the previously determined structure having the space group Pbca and a(-) a(-)

Transmission Electron Microscopy Study of a Defected Zone in GaN on a SiC Substrate Grown by Hydride Vapor Phase Epitaxy

August 1, 2003

Author(s)

Leonid A. Bendersky, Denis Tsvetkov, Y Melnik

A defected zone in the HVPE (hydride vapor phase epitaxy)-deposited GaN located near an interface with a SiC substrate was investigated by transmission electron microscopy (TEM). It was shown that the defected zone is formed during the process of

Interfacial Reactions of Ti/n-GaN Contacts at Elevated Temperature

July 1, 2003

Author(s)

C J. Lu, Albert Davydov, Daniel Josell, Leonid A. Bendersky

Interfacial reactions in Ti/GaN contacts have been studied using conventional and high-resolution transmission electron microscopy (TEM), energy-filtered TEM (EFTEM) and X-ray diffraction. The thin film contacts were fabricated by evaporating Ti on n-GaN

Electron Backscattered Diffraction and Energy Dispersive X-ray Spectroscopy Study of the Phase NiSn4

June 1, 2003

Author(s)

William J. Boettinger, Mark D. Vaudin, Maureen E. Williams, Leonid A. Bendersky, W R. Wagner

Electron backscattered diffraction and energy dispersive X-ray spectroscopy has been performed on a plate-shaped phase formed through the reaction of Sn and Ni during extended thermal cycling tests, on ceramic capacitors have electroplated tin end

High-Resolution Identifications of 1/2 Stacking Faults in Epitaxial Ba 0.3 Sr 0.7 Ti0 3 Thin Films

May 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, K S. Chang, Ichiro Takeuchi

The near-interface region of an epitaxial Ba 0.3 Sr 0.7Ti0 3 thin film grows on (001) LaA10 3 was studied using transmission electron microscopy. The region was found to consist of a high density of 1/2 stacking faults bounded by partial dislocations. The

Dissociation and Evolution of Threading Dislocations in Epitaxial Ba 0.3 Sr 0.7 Ti0 3 Thin Films Grown on (001) LaA10 3

January 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, K S. Chang, Ichiro Takeuchi

The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 (BSTO) film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The dominant defects in the film are edge-type threading

Microstructure and Microstructural Evolution in BaTi0 3 Films Fabricated Using the Combinatorial Precursor Method

October 1, 2002

Author(s)

Leonid A. Bendersky, C J. Lu, J J. Scott, Ichiro Takeuchi, K S. Chang

Pulsed laser deposition (PLD) of Ti0(sub2) and BaF(sub2) layers at room temperature and subsequent annealing in flowing oxygen were used to form homogeneous expitaxial BaTi0(sub3) films on LaAlO(sub3). This oxide film synthesis method, known as the

Incommensurate Structure of Electron-Doped Layerd La (sub2-2x)Ca(sub1+2X)Mn(sub2)0(sub7) (0.6 0.8) Compounds

September 1, 2002

Author(s)

Leonid A. Bendersky

A series of Ruddlesden-Popper compounds with n = 2 and stoichiometry La(sub2-2x)Ca(sub1+2x)Mn(sub2)0(sub7) has been successfully synthesized by a citrate gel technique for 0.6>x>1.0 1.0. Investigation of the magnetic and electric properties of the

Fabrication and Characterization of In-Situ Grown Epitaxial Ba 1-x Sr x Ti0 3 ) Composition Spreads

July 1, 2002

Author(s)

K S. Chang, M A. Aronova, O Famodu, Jason Hattrick-Simpers, S E. Lofland, Ichiro Takeuchi, C J. Lu, Leonid A. Bendersky, H C. Chang

We have used our combinatorial pulsed laser deposition system to in-situ fabricate epitaxial Ba(sub1-x)Sr(sub x)Ti)(sub 3) thin film composition spreads on (100) LaAl0(sub3) substrates. Multimode quantitative microwave microscopy was used to perform

High Throughput Methods for Materials R&D: A Growing Effort at NIST

April 1, 2002

Author(s)

Leonid A. Bendersky, J D. Hewes

The U.S. private sector has indicated that the National Institute of Standards and Technology has a role to play in facilitating the implementation of high throughput experimentation, for example using combinatorial methods. The Advanced Technology Program

Electron Diffraction Using Transmission Electron Microscopy

November 1, 2001

Author(s)

Leonid A. Bendersky, Frank W. Gayle

Electron diffraction via the transmission electron microscope is a powerful method for characterizing the structure of materials, including perfect crystals and defect structures. The advantages of electron diffraction over other methods, e.g., x-ray or

Stabilization of the n = 3 Ruddlesden-Popper Phases: Sr 4 Mn 3-x Fe x O 10-d and Sr 4-y Ca y Mn 3 O 10- d

November 1, 2001

Author(s)

R Chen, Martha Greenblatt, Leonid A. Bendersky

Sr 4Mn 3O 10, which crystallizes in space group Cmca, is not a Ruddlesden-Popper (RP) phase. The partial substitution of either Mn by Fe or Sr by Ca leads to a stable n = 3 RP phase with tetragonal symmetry (I4/mmm). The minimum amount of Fe or Ca needed

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