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Search Publications

NIST Authors in Bold

Displaying 23026 - 23050 of 74196

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

August 27, 2012
Author(s)
Christopher M. Dodson, Patrick Parkinson, Kristine A. Bertness, Hannah J. Joyce, Laura M. Herz, Norman Sanford, Michael B. Johnston
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material

Service Life Prediction for Sealants

August 27, 2012
Author(s)
Christopher C. White, Donald L. Hunston, Kar T. Tan
Previous industry consensus postulated that four elements of the weather: Temperature, Humidity, Ultraviolet Radiation, and Mechanical loading were responsible for the majority of the changes observed in sealants exposed to outdoor weathering. The NIST

Simulating Quantum Magnetism with Correlated Non-Neutral Ion Plasmas

August 27, 2012
Author(s)
John J. Bollinger, Joseph W. Britton, Brian C. Sawyer
By employing forces which depend on the internal atomic state (or spin) of an atomic ion, the Coulomb potential energy of a strongly coupled array of ions can be modified in a spin-dependent way to mimic effective quantum spin Hamiltonians. Both

The TriTon Transformation

August 27, 2012
Author(s)
Daniel C. Smith-Tone
Many new systems have been proposed which hide an easily invertible multivariate quadratic map in a larger structure by adding more variables and introducing some mixing of a random component to the structured system. While many systems which have been

Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors

August 27, 2012
Author(s)
Nayool Shin, Dean DeLongchamp, Jihoon Kang, Regis J. Kline, Lee J. Richter, Vivek Prabhu, Balaji Purushothamanc, John E. Anthony, Do Y. Yoon
The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film transistor

3D Precision Imaging with a Terahertz-bandwidth, Comb-calibrated Swept Laser

August 26, 2012
Author(s)
Esther Baumann, Fabrizio R. Giorgetta, Ian R. Coddington, Kevin O. Knabe, Laura C. Sinclair, William C. Swann, Nathan R. Newbury
A frequency-comb and MEMS-based external-cavity laser are integrated into a THz-bandwidth LIDAR system. Range to a diffuse target is measured at sub-msec update times, a comb-based precision/accuracy of 100 nm, and a resolution of 150 microns. Example 3D

Coherent Diabatic Ion Transport and Separation in a Multizone Trap Array

August 24, 2012
Author(s)
Ryan S. Bowler, John P. Gaebler, Yiheng Lin, Ting Rei Tan, David Hanneke, John D. Jost, J. Home, Dietrich G. Leibfried, David J. Wineland
We investigate ion motion dynamics during the transport between and separation into spatially distinct trap locations in a multi-zone trap array. We laser-cool a single $\ensuremath{^{9}{\rm {Be}^{+}}}$ ion held in a linear Paul trap to near its ground

Microwave Measurements and Systematic Circuit-Model Extraction of Nanowire Metal Semiconductor Field Effect Transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model

Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model

Recommendation for Applications Using Approved Hash Algorithms

August 24, 2012
Author(s)
Quynh H. Dang
Hash functions that compute a fixed-length message digest from arbitrary length messages are widely used for many purposes in information security. This document provides security guidelines for achieving the required or desired security strengths when

A high-bandwidth electromagnetic MEMS motion stage for scanning applications

August 23, 2012
Author(s)
Young M. Choi, Nicholas G. Dagalakis, Jason J. Gorman, Seung Ho Yang, Yong Sik Kim, Jae M. Yoo
This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as well as

New International Formulation for the Thermal Conductivity of H2O

August 23, 2012
Author(s)
Marcia L. Huber, Richard A. Perkins, Daniel G. Friend, Jan V. Sengers, Marc J. Assael, Ifigenia N. Metaxa, Kiyoshi Miyagawa, Robert Hellmann, Eckhard Vogel
The International Association for the Properties of Water and Steam (IAPWS) encouraged an extensive research effort to update the IAPS Formulation 1985 for the Thermal Conductivity of Ordinary Water Substance, leading to the adoption of a Release on the

MEMS-based universal fatigue test technique

August 22, 2012
Author(s)
Li-Anne Liew, David T. Read, Nicholas Barbosa
We have developed a MEMS (micro electro mechanical systems) -based method for fatigue testing of micro- to millimeter-sized specimens of any material (hence ‘universal’). The miniature, re- usable, stand-alone fatigue test frame is fabricated as a single

Kinematic Modeling and Calibration of a Flexure Based Hexapod Nanopositioner

August 21, 2012
Author(s)
Hongliang Shi, Hai-Jun Su, Nicholas Dagalakis, John A. Kramar
This paper covers the kinematic modeling of a flexure-based, hexapod nanopositioner and a new method of calibration for this type of nanopositioner. This six degrees of freedom tri-stage nanopositioner can generate small displacement, high-resolution

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

August 21, 2012
Author(s)
Andrew M. Herrero, Paul T. Blanchard, Aric W. Sanders, Matthew D. Brubaker, Norman A. Sanford, Alexana Roshko, Kristine A. Bertness
The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N 2/O 2. This degradation originates from the

Structure Determination of a Polymeric Amorphous Chain Compound AlB 4 H 11

August 21, 2012
Author(s)
Xuenian Chen, Yongsheng Zhang, Yongli Wang, Wei Zhou, Douglas A. Knight, Teshome B. Yisgedu, Zhenguo Huang, Hima K. Lingam, Beau Billet, Terrence J. Udovic, Gilbert M. Brown, Sheldon G. Shore, Christopher M. Wolverton, Ji-Cheng Zhao
The structure of the amorphous aluminoborane compound AlB 4H 11 was identified through a collaborative study closely coupling theoretical predictions via the PEGS+DFT approach with experimental measurements using IR, NMR, and neutron vibrational
Displaying 23026 - 23050 of 74196
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