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Graphene Epitaxial Growth on SiC(0001) for Resistance Standards
Published
Author(s)
Mariano A. Real, Tian T. Shen, George R. Jones Jr., Randolph Elmquist, Johannes A. Soons, Albert Davydov
Abstract
Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene's performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.
Proceedings Title
Conference on Precision Electromagnetic Measurements 2012
Real, M.
, Shen, T.
, Jones Jr., G.
, Elmquist, R.
, Soons, J.
and Davydov, A.
(2012),
Graphene Epitaxial Growth on SiC(0001) for Resistance Standards, Conference on Precision Electromagnetic Measurements 2012
, Washington, DC, US
(Accessed October 13, 2025)