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Graphene Epitaxial Growth on SiC(0001) for Resistance Standards

Published

Author(s)

Mariano A. Real, Tian T. Shen, George R. Jones Jr., Randolph Elmquist, Johannes A. Soons, Albert Davydov

Abstract

Epitaxial growth of graphene layers on 6H-SiC(0001) substrates have been studied in order to improve graphene's performance for metrological applications. A face-to-face (FTF) sublimation method at 2000 °C and in Ar background atmosphere is used to inhibit the rates of SiC decomposition and Si sublimation and as a means of controlling the graphene layer development. Sample surface morphology and its relation to changes in the growth conditions are described.
Proceedings Title
Conference on Precision Electromagnetic Measurements 2012
Conference Dates
June 30-July 6, 2012
Conference Location
Washington, DC, US

Keywords

Electrical resistance standards, epitaxial growth, graphene, surface morphology, quantum Hall effect

Citation

Real, M. , Shen, T. , Jones Jr., G. , Elmquist, R. , Soons, J. and Davydov, A. (2012), Graphene Epitaxial Growth on SiC(0001) for Resistance Standards, Conference on Precision Electromagnetic Measurements 2012 , Washington, DC, US (Accessed July 23, 2024)

Issues

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Created May 31, 2012, Updated October 12, 2021