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Displaying 1326 - 1350 of 1939

Gate Dielectric Thickness Metrology Using Transmission Electron Microscopy

January 1, 2000
Author(s)
J H. Scott, Eric S. Windsor, D Brady, J Canterbury, A. Karamcheti, W Chism, A C. Diebold
Silicon Oxynitride blanket films approximately 2 n min thickness are characterized in cross section using a 300 keV TEM/STEM. High resolution imaging is used to investigate the accuracy and precision of TEM film thickness measurements and their

Energy Dispersive X-Ray Spectrometry With the Transition Edge Sensor Microcalorimeter: A Revolutionary Advance in Materials Microanalysis

December 1, 1999
Author(s)
Dale E. Newbury, David A. Wollman, Kent D. Irwin, Gene C. Hilton, John M. Martinis
The NIST microcalorimeter energy dispersive x-ray spectrometer provides important advances in x-ray spectrometry. The high spectral resolution, approaching 2 eV for photon energies below 2 keV, the wide photon energy coverage, 250 eV to 10 keV, and the
Displaying 1326 - 1350 of 1939
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