U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 1326 - 1350 of 3439

Bulk Silicon Is Susceptible to Fatigue

November 19, 2007
Author(s)
Sanjit Bhowmick, Juan J. Melendez-Martinez, Brian R. Lawn
It has long been held that bulk silicon is immune from fatigue. We present contrary evidence demonstrating severe fatigue in macroscale cracks produced in cyclic loading of single-crystal silicon with a sphere indenter. The key ingredient is a component of

Characterization of 3-Color CARS in a 2-Pulse Broadband CARS Spectrum

November 15, 2007
Author(s)
Young Jong Lee, Marcus T. Cicerone, Yuexin Liu
We present a new and simple approach to broadband coherent anti-Stokes Raman scattering (CARS) microscopy that yields background-free vibrational spectra. We present evidence for a mechanism where two different frequency components in a continuum pulse

Nothing is Brittle at the Nanoscale

November 15, 2007
Author(s)
Pradeep N. Namboodiri, Doo-In Kim, Jaroslaw Grobelny, T Hawa, B Henz, Michael R. Zachariah
Fracture of nanoscale contacts formed between spherical probes and flat samples is studied using an atomic force microscope (AFM) in ultra high vacuum environment. Analysis of the nonlinear elastic behavior observed during the fracture process in the force

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

Methodology for Evaluating Candidate Geometric Reference Scaffolds

November 1, 2007
Author(s)
Joy P. Dunkers, Stefan D. Leigh, David Dean, M Cooke, Richard Ketcham, Marcus T. Cicerone
The motivation for the work is to rank candidate reference scaffolds by quality metrics in a systematic and quantitative manner by screening several microstructural descriptors of importance. We chose total pore volume, pore volume distribution, and pore
Displaying 1326 - 1350 of 3439
Was this page helpful?