Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Non-Cavitational Tensile Creep in Lu-Doped Silicon Nitride



F Lofaj, Sheldon M. Wiederhorn, Gabrielle G. Long, B Hockey, P R. Jemian, L Browder, April Andreas


The tensile creep behavior of a Lu-based silicon nitride, SN 281, was studied in the temperature range 1400 C to 1550 C with test periods of up to 10 000 h. Strain rates were 3 to 5 orders of magnitude less than those for Yb-based grades of silicon nitride under the same conditions, suggesting a potential for prolonged operation of this material at temperatures up to 1470 C. The stress exponent, n, and the activation energy, Q, for creep are 5.3 2.0 and 757.6 117.0 kJmol-1, respectively. Precise density and ultra small-angle X-ray scattering measurements revealed that, in contrast to other grades of silicon nitride, cavitation does not occur in SN 281. Redistribution of the secondary phases via solution-precipitation combined with grain boundary sliding is discussed as a possible creep mechanism in SN 281. A discussion of the effect of Lu on viscosity indicates that simple replacement of Yb by Lu cannot explain the improvement of creep behavior.
Journal of European Ceramic Society
22 No. 14-15


cavity suppression, lutetium, silicon nitride, solution-precipitation, tensile creep


Lofaj, F. , Wiederhorn, S. , Long, G. , Hockey, B. , Jemian, P. , Browder, L. and Andreas, A. (2002), Non-Cavitational Tensile Creep in Lu-Doped Silicon Nitride, Journal of European Ceramic Society (Accessed June 16, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created December 31, 2001, Updated October 12, 2021