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Displaying 701 - 725 of 1314

Microstructure Evolution during Alternating-Current-lnduced Fatigue

November 1, 2004
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
Subjecting electronic interconnect lines to high-density, low.frequency alternating current creates cyclic thermomechanical stresses that eventually cause electrical failure. A detailed understanding of the failure process could contribute to both

Multiport Investigation of the Coupling of High-Impedance Probes

November 1, 2004
Author(s)
Dylan F. Williams, Pavel Kabos, Uwe Arz
We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probe’s load of the

Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

October 29, 2004
Author(s)
Shehzaad F. Kaka, Matthew Pufall, William Rippard, Thomas J. Silva, Stephen E. Russek, Jordan A. Katine, Matt Carey
Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 to 7.8 mA, and varied in duration within the

Electrostatic Discharge Protection For Embedded-Sensor Systems-On-a-Chip

October 8, 2004
Author(s)
Javier A. Salcedo, Juin J. Liou, Muhammad Afridi, Allen R. Hefner Jr., Ankush Varma
The robustness of Embedded-Sensor (ES) System-on-a-Chip (SoC) applications involves several design constrains that require a unique assessment. For example, space-efficient electrostatic discharge protection (ESD) must be provided to protect the CMOS

Compact Models for Silicon Carbide Power Devices

October 1, 2004
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Ranbir Singh
The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the

Electrical material property measurements using a free-field, ultra-wideband system

October 1, 2004
Author(s)
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Seturnino Canales, James R. Baker-Jarvis, Michael D. Janezic, Jim L. Drewniak, Marina Kolednitseva, Jianmin Zhang, Poornachander Rawa
Abstract: Nondestructive measurements of materials using TEM horn antennas and an ultra-wideband measurement system are presented. Time-domain gating and genetic algorithms are used to process the data and extract the dielectric properties of the material

Lumped-Parameter Thermal Modeling of an IPEM using Thermal Component Models

August 15, 2004
Author(s)
J J. Rodriguez, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Madelaine H. Hernandez, Jorge Gonz?lez
A thermal model for the CPES IPEM Gen. II is presented. The selected approach is the simulation of the thermal behavior of an experimental IPEM testbed using the 1D finite difference method. An equivalent electrical network representation of the thermal

TEM horn antennas: A promising new technology for compliance testing

August 1, 2004
Author(s)
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Seturnino Canales
Abstract-This paper discusses the advantages of using a TEM-horn antenna over conventional EMC antennas such as the log-periodic, hybrids, or biconical antennas. Important issues such as frequency coverage, linearity, time-resolution of events, cost, and

Mems-Based Embedded Sensor Virtual Components for SOC

June 24, 2004
Author(s)
Muhammad Afridi, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Ankush Varma, Bruce Jacob, Stephen Semancik
The design and implementation of a monolithic MEMS-based (Micro Electro Mechanical Systems) gas sensor virtual component is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the
Displaying 701 - 725 of 1314
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