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Multiport Investigation of the Coupling of High-Impedance Probes

Published

Author(s)

Dylan F. Williams, Pavel Kabos, Uwe Arz

Abstract

We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probe’s load of the circuit, and the coupling between the probe and the device.
Citation
IEEE Microwave and Wireless Components Letters
Volume
14
Issue
11

Citation

Williams, D. , Kabos, P. and Arz, U. (2004), Multiport Investigation of the Coupling of High-Impedance Probes, IEEE Microwave and Wireless Components Letters, [online], https://doi.org/10.1109/LMWC.2004.837071 (Accessed April 16, 2024)
Created November 1, 2004, Updated November 10, 2018