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Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion

Published

Author(s)

Allen R. Hefner Jr., Ranbir Singh, Jih-Sheng Lai

Abstract

Recent breakthroughs in Silicon Carbide (SiC) material and fabrication technology have led to the development of High-Voltage, High-Frequency (HV-HF) power devices with 10-kV, 15-kHz power switching capability. Programs are underway to demonstrate half-bridge modules with 15-kV, 110-A, 20-kHz capability in the next few years. The emergence of HV-HF devices with such capability is expected to revolutionize utility and military power distribution and conversion by extending the use of Pulse Width Modulation (PWM) technology to high voltage applications.
Citation
IEEE Power Electronics Society Newsleter
Volume
16
Issue
4

Keywords

High-Frequency, High-Voltage, power devices, power distribution, Silicon Carbide, solid state transformer

Citation

Hefner Jr., A. , Singh, R. and Lai, J. (2004), Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion, IEEE Power Electronics Society Newsleter, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31858 (Accessed June 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 2, 2004, Updated October 12, 2021