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NIST Authors in Bold

Displaying 53526 - 53550 of 74186

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

January 1, 1998
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Time Domain Modal Estimation

January 1, 1998
Author(s)
S Fahey, Jon R. Pratt
In a previous technical feature,2 we described some motives for performing structural dynamic tests and subsequently reviewed some frequency domain techniques for uncovering modal parameters. This time, we take up some applicable time domain algorithms by

Time-Dependent Conductance of Pd-Dosed SnO2 (110)

January 1, 1998
Author(s)
Richard E. Cavicchi, V Sukharev, Stephen Semancik
Time-dependent phenomena related to the reaction of ultrathin films of Pd deposited on SnO2 (110) surfaces of differing oxygen content have been investigated. Conductance measurements and x-ray photoemission spectroscopy (XPS) were used to characterize

TOTAL TDEV

January 1, 1998
Author(s)
Marc A. Weiss, David A. Howe

Trapped Bose-Einstein Condensates at Finite Temperature: A Two-Gas Model

January 1, 1998
Author(s)
Karen G. Burnett, M Edwards, Charles W. Clark, R J. Dodd
A simple picture describes the results of recent treatments of partially-condensed, dilute, trapped Bose gases at temperature T>O. The condensate wavefunction is nearly identical to that of a T=O condensate with the same number of condensate atoms, No. The
Displaying 53526 - 53550 of 74186
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