Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 5101 - 5125 of 73697

Advances in Magnetometry Through Miniaturization

October 12, 2021
Author(s)
A Edelstein, J Burnette, Greg Fischer, S F. Cheng, William F. Egelhoff Jr., Robert McMichael, E Nowak
Recent innovations may lead to magnetic sensors that are smaller, more sensitive and/or cost less than current magnetometers. Examples of this are the chip scale atomic magnetometer, magnetic tunnel junctions with MgO barriers, and a device for minimizing

Amino Acid Exchangeability from Experimental Data

October 12, 2021
Author(s)
L Y. Yampolsky, Arlin Stoltzfus
Amino acid sequence differences between proteins are often interpreted by reference to a pairwise measure of amino acid similarity, based either on observed evolutionary transition probabilities, or on some physicochemical model of effects. However

Analysis of Point-Contact Andreev Reflection Spectra in Spin Polarization Measurements

October 12, 2021
Author(s)
G T. Woods, Robert J. Soulen, I I. Mazin, B Nadgorny, M. S. Osofsky, J Sanders, H. Srikanth, William F. Egelhoff Jr., Raju V. Datla
We present a systematic analysis of point-contact Andreev reflection (PCAR) spectra for ferromagnetic materials, using both modeling and experimental data. We emphasize the importance of consistent data analysis to avoid possible misinterpretation of the

Analysis of the Free Ion Nd 3+ Spectrum (Nd IV)

October 12, 2021
Author(s)
J-F Wyart, Ali Meftah, Wan-U Lydia Tchang-Brillet, Norbert Champion, O Lamrous, Nissan Spector, J Sugar
Recent breakthrough in the analysis of Nd IV resulted in the establishment of 37 energy levels of the ground configuration 4f^3. We report here the completion to all 41 levels of this configuration. Wavelength measurements extended to 2800 A and in higher

Analytical and Numerical Analyses for Two-Dimensional Stress Transfer

October 12, 2021
Author(s)
C H. Hsueh, P Becher, Lin-Sien H. Lum, Stephen A. Langer, W Carter
Both analytical modeling and numerical simulations were performed to analyze the stress transfer in platelet-reinforced composites in a two-dimensional sense. In the two-dimensional model, an embedded elongate plate bonded to a matrix along its length

Annealing Temperature Dependences of Magnetization Reversal in Exchange Biased Bilayers

October 12, 2021
Author(s)
C G. Lee, V S. Gornakov, B H. Koo, K S. Shin, Robert McMichael, Andrew P. Chen, William F. Egelhoff Jr.
The thermal stability of the hysteretic properties and domain structures of exchange-coupled Co-Fe/Ir-Mn and Ni-Fe/Ir-Mn bilayers was studied. Using the magneto-optical indicator film technique, X-ray diffractometry, and VSM, we have revealed that the

Anomalous Asymmetric Intermixing in Pt/Ti

October 12, 2021
Author(s)
P Sule, M. Menyhard, L Kotis, J Labar, William F. Egelhoff Jr.
The ion-sputtering induced intermixing is studied by Monte-Carlo TRIM, molecular dynamics (MD) simulations, and Auger electron spectroscopy depth pro_ling (AES-DP) analysis in Pt/Ti/Si substrate (Pt/Ti) and Ta/Ti/Pt/Si substrate (Ti/Pt) multilayers

Anomalously Fast Decay of the LH-HH Exciton Raman Coherence

October 12, 2021
Author(s)
C N. Borca, A G. VanEngen Spivey, Steven T. Cundiff
We perform a three-pulse transient four-wave-mixing experiment on a weakly disordered GaAs/AlGaAs multiple quantum well. This allows us to measure both the decay of the Raman coherence between the heave-hole and light -hole excitons in a semiconductor

Anthrax Toxin Functional Assay: Lethal Factor Binding to Protective Antigen Ion Channel

October 12, 2021
Author(s)
Kelly Halverson, R G. Panchal, T L. Nguyen, S Little, Martin Misakian, Sina Bavari, John J. Kasianowicz
Bacillus anthracis secretes three toxins (protective antigen, PA; lethal factor, LF; and edema factor, EF) that are the molecular basis of anthrax-induced cell death. We studied the functional interaction between LF and activated PA (PA63) in planar

Application of -Fe203 Bottom GMR Spin-Valve for Magnetoresistive Random Access Memory (MRAM)

October 12, 2021
Author(s)
S E. Bae, William F. Egelhoff Jr., P J. Chen, S Zurn, L Sheppard, E J. Torok, J H. Judy
The possibility of the application of -Fe203 bottom GMR spin-valve for magnetoresistive random access memory (MRAM) device has been investigated for the first time from the point view of magnetic properties of spin-valve, device fabrication, and thermal

Applications of Giant Magnetoresitance Spin-Valve Transpinnor for Magneto-Electronics

October 12, 2021
Author(s)
S E. Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, E J. Torok, R Spitzer, J H. Judy
This paper discusses the applications of a Transpinnor, a new kind of active solid-state device utilizing giant magnetoresitance (GMR) spin valves, for the state of art of magneto-electronic device technology. A Transpinnor is a modified Wheatstone bridge

Arrhenius-like Temperature Dependence of the Segmental Relaxation below T g

October 12, 2021
Author(s)
P A. O'Connell, G B. McKenna
In a recent paper DiMarzio and Yang [J. Res. Natl. Inst. Stds. Technol., 102, 135 (1997)] predicted that transport properties such as viscosity and diffusion coefficient do not follow the typical WLF- or Vogel-Fulcher-type of temperature dependence as the

Arsenic and Antimony Implantations in SiC

October 12, 2021
Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements showed severe out-diffusion of the implants for annealing

Artifacts That Could Be Misinterpreted as Ballistic Magnetoresistance

October 12, 2021
Author(s)
William F. Egelhoff Jr., L Gan, Erik B. Svedberg, Cedric J. Powell, Alexander J. Shapiro, Robert McMichael, J Mallett, Thomas P. Moffat, Mark D. Stiles
Theoretical physics suggests that very large magnetoresistance (MR) values might be found in certain magnetic nanocontacts if a magnetic domain wall could be localized in them with a length scale that would allow conduction electrons to transit the wall
Displaying 5101 - 5125 of 73697
Was this page helpful?