July 1, 1999
Author(s)
E Handy, M V. Rao, K A. Jones, M A. Derenge, P Chi, R D. Vispute, T Venkatesan, N A. Papanicolaou, J Mittereder
Aluminum nitride (AlN) has been used as an encapsulate for annealing nitrogen (N), arsenic (As), antimony (Sb), aluminum (Al), and boron (B) ion-implanted 6H-SiC. Atomic force microscopy (AFM) has revealed that the AlN encapsulate prevents the formation of