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Displaying 51 - 75 of 3438

Solvent-cast 3D Printing of Biodegradable Polymer Scaffolds

October 22, 2021
Author(s)
John Tolbert, Diana Hammerstone, Nathaniel Yuchimiuk, Jonathan Seppala, Lesley Chow
Three-dimensional (3D) printing is a popular technique to fabricate scaffolds for tissue engineering because of its ability to produce complex tissue-like architectures. Scaffolds are often 3D printed using biodegradable polymers like poly(caprolactone)

Analytical and Numerical Analyses for Two-Dimensional Stress Transfer

October 12, 2021
Author(s)
C H. Hsueh, P Becher, Lin-Sien H. Lum, Stephen A. Langer, W Carter
Both analytical modeling and numerical simulations were performed to analyze the stress transfer in platelet-reinforced composites in a two-dimensional sense. In the two-dimensional model, an embedded elongate plate bonded to a matrix along its length

c-Axis Oriented Epitaxial BaTiO 3 Films on (001) Si

October 12, 2021
Author(s)
V Vaithyanathan, J Lettieri, W Tian, A Kochhar, H Ma, A Sharan, A Vasudevarao, J. A. Aust, Y Li, Long-Qing Chen, P Zschack, Joseph Woicik
c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy (MBE). The orientation relationship between the film and substrate is (001) BaTiO3 // (001) Si and [100] BaTiO3 // [110] Si. The

Characterization of New 5M and 7M Polytypes of Niobia-Doped Ca 2 Ta 2 O 7

October 12, 2021
Author(s)
I E. Grey, Robert S. Roth, W G. Mumme, J Planes, Leonid A. Bendersky, C Li, J Chenavas
Two new calcium tantalate polytypes have been prepared in the system Ca2Ta2O7-Ca2Nb2O7. Their structures have been determined and refined using single crystal X-ray diffraction data and powder neutron diffraction data, and their dielectric properties have

Chemical Analysis of HfO 2 / Si (100) Film Systems Exposed to NH 3 Thermal Processing

October 12, 2021
Author(s)
Patrick S. Lysaght, Joseph Woicik, Daniel A. Fischer, Gennadi Bersuker, Joel Barnett, Brendan Foran, Hsing-Huang Tseng, Raj Jammy
Nitrogen incorporation in HfO2/SiO2 films utilized as high-k gate dielectric layers in advanced metal-oxide field-effect transistors (MOSFETs) has been investigated. Thin HfO2 blanket films deposited by atomic layer deposition on either SiO2 or NH3 treated

Comparative Dielectric Behavior of PBFe 1/2 Ta 1/2 O 3 and NaNbO 3 :Gd Relaxor-Like Crystals

October 12, 2021
Author(s)
I P. Raevski, S A. Prosandeev, U Waghmare, V V. Eremkin, V G. Smotrakov, V A. Shuvaeva
Experimental data obtained for PBFe 1/2Ta 1/20 3 (PFT) and NaNbO 3:Gd (NaNbGd) single crystals show a diffused dielectric permittivity peak that is inherent to relaxor ferroelectrics. However some deviations from the normal relaxor properties were also
Displaying 51 - 75 of 3438