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Engineering of Self-Assembled Domain Architectures With Ultra-High Piezoelectric Response in Epitaxial Ferroelectric Films

Published

Author(s)

J.H. Yang, Julia Slutsker, Igor Levin, D H. Kim, Chang-Beom Eom, R Ramesh, Alexander L. Roytburd

Abstract

Non-180 domain wall movement, which makes a large contribution to the piezoelectric response of ferroelectric bulk materials, were found to be much more difficult in epitaxial films, because of substrate clamping and inter-domain pinning. Through theoretical calculations and experimental studies we show that by choosing the film composition on the morphortropic phase boundary, it is possible to form a mobile , 2-domain architecture in an epitaxial PbZrxTi1-xO3 film with a (101) orientation. Transmission electron microscopy, X-ray diffraction analysis, and atomic force microscopy revealed that the (101) films feature a self-assembled polydomain structure, consisting of two domain sets of a tetragonal phase. Experiment results on the (101) films exhibits a reversible longitudinal strain as high as 0.35% under applied ac electric fields of 30kV/cm, corresponding to an effective piezoelectric coefficient on the order of 1,000 pm/V. This result suggests an optimized design of ferroelectric thin film heterostructures for better electromechanical performance.
Citation
Advanced Functional Materials

Keywords

domains, piezoelectric, self-assembled, thin films

Citation

Yang, J. , Slutsker, J. , Levin, I. , Kim, D. , Eom, C. , Ramesh, R. and Roytburd, A. (2021), Engineering of Self-Assembled Domain Architectures With Ultra-High Piezoelectric Response in Epitaxial Ferroelectric Films, Advanced Functional Materials (Accessed October 19, 2021)
Created October 12, 2021