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Displacive Phase Transition in SrTiO3 Thin Films Grown on Si(001)

Published

Author(s)

F S. Aguirre-Tostado, A Herrera-Gomez, Joseph Woicik, R Droopad, Z Yu, D G. Schlom, E Karapetrova, P Zschack

Abstract

Polarization dependent x-ray absorption fine structure measurements performed at the Ti K edge together with x-ray diffraction have been used to study the local structure in SrTiO3 thin films grown epitaxially on Si(001). SrTiO3 layers on Si(001) are found to be unstrained for a thickness of approximately 80 A, a splitting of the Ti-O distance perpendicular to the interface is observed: rTiO = 1.87 +/- 0.02 and rTiO = 2.09 +/- 0.06 , whereas only a single Ti-O distance is observed within the plane of the interface: rTiO = 1.95 +/- 0.01 . These findings indicate a tetragonal plus displacive ferroelectric distortion of the cubic SrTiO3 unit cell in response to the compressive strain imposed on the SrTiO3 layer by the Si substrate. Modification of the Ti K pre-edge features are consistent with these findings.
Citation
Letter to Nature

Keywords

eXAFS, ferroelectric, polarization, STO

Citation

Aguirre-Tostado, F. , Herrera-Gomez, A. , Woicik, J. , Droopad, R. , Yu, Z. , Schlom, D. , Karapetrova, E. and Zschack, P. (2021), Displacive Phase Transition in SrTiO<sub>3</sub> Thin Films Grown on Si(001), Letter to Nature (Accessed December 1, 2021)
Created October 12, 2021