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Displaying 47976 - 48000 of 73697

Security and Confidence in IT Products

April 1, 2000
Author(s)
E Roback
Federal organizations need to have an appropriate level of confidence that the security features of IT products work as intended and meet security specifications. The basis for having such confidence is through security assurance. Products with an

SEM Sentinel - SEM Performance Measurement System, Part 1

April 1, 2000
Author(s)
Alice V. Ling, Andras Vladar, Bradley N. Damazo, M A. Donmez, Michael T. Postek
This report describes the current design of a system for monitoring the performance of several major subsystems of a scanning electron microscope (SEM). The following subsystems and the associated functional parameters will be monitored. 1) Vacuum system

Simulation of Fluid Flow and Permeability in Cohesionless Soils

April 1, 2000
Author(s)
E Masad, B Muhunthan, Nicos Martys
This paper reports on a new laboratory methodology for the determination of the structure of pores, a method for the analysis of the data to obtain the statistics of the pore structure distribution, simulation of porous media with statistics consistent

Structure and Magnetism in the Systems Zr 3 (Rh 1-x Ru x ) 4 and Zr 3 (Rh 1-y Pd y ) 4

April 1, 2000
Author(s)
Lawrence H. Bennett, Richard M. Waterstrat, L Swartzendruber, H J. Brown, R E. Watson
The Zr 3(Rh 1-yPd y) 4 system in the Pu 3Pd y) 4 structure, which has been reported on previously, is further investigated here. It exhibits an incommensurate density wave for the 0.04 {less then or equal to} y {less then or equal to} 0.06, accompanied by

The Past, Present, and Future of the Computational Materials Science of Concrete

April 1, 2000
Author(s)
Edward J. Garboczi, Dale P. Bentz, G J. Frohnsdorff
The computational materials science of concrete has developed rapidly in the last 15 years. This development has been strongly tied to the even more rapid advances in computer processor speed and memory during this same time, without which progress in the

The Sensitivity of a Method to Predict a Capacitor's Frequency Characteristic

April 1, 2000
Author(s)
S. Avramov, Andrew D. Koffman, Nile M. Oldham, Bryan C. Waltrip
A joint effort between the U.S. Naval Academy and the National Institute of Standard and Technology (NIST) resulted in the development of a method to characterize the capacitance and dissipation factor of a set of commercial standard four terminal-pair

The TREC Spoken Document Retrieval Track: A Success Story

April 1, 2000
Author(s)
John S. Garofolo, C G. Auzanne, Ellen M. Voorhees
This paper describes work within the NIST Text REtrieval Conference (TREC) over the last three years in designing and implementing evaluations of Spoken Document Retrieval (SDR) technology within a broadcast news domain. SDR involves the search and

Thermodynamic Properties of Vanadium Silicides. II. Standard Molar Enthalpy of Formation {D} f i m o (298.15 K) and Reassessed Thermodynamic Properties of Trivanadium Monosilicide (V3Si)

April 1, 2000
Author(s)
P A. O'Hare, K Watling, G A. Hope
Fluorine bomb combustion calorimetric measurements of the energy of the reaction: V 3Si(cr) + (19/2)F 2(g) = 3VF 5(g) + SiF 4(g), have given a value of -(163.3 ± 6.9) kJ.mol -1 for the standard molar enthalpy of formation {Δ} fH o m(V 3Si, cr) at T = 298

Vapor Pressure of the SrPbO 3 Perovskite Phase

April 1, 2000
Author(s)
Lawrence P. Cook, Winnie K. Wong-Ng
The perovskite phase SrPbO 3 is important as a buffer and indicator of PbO chemical potential (at fixed p O2 ) according to the reaction: 2 SrPbO 3 --> Sr 2PbO 4 + PbO(g) + 1/2 O2 (g), where the term PbO(g) includes several Pb-containing gaseous species

Security Implementations of Active Content

March 30, 2000
Author(s)
Wayne Jansen, Athanasios T. Karygiannis
Active content documents offer several benefits to both the users of these documents and their authors. Java applets, JavaScript, and ActiveX provide more functionality to static Web pages, plug-ins enable browsers to support new types of content

Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on Silicon

March 23, 2000
Author(s)
J Kolodzey, E A. Chowdhury, T Adam, G Qui, I Rau, J Olowolafe, John S. Suehle, Y Chen
Leakage currents and dielectric breakdown were studied in MIS capacitors of metal - aluminum oxide - silicon. The aluminum oxide was produced by thermally oxidizing AIN at 800 0C to 1100 0C under dry O 2 conditions. The AIN films were deposited by rf
Displaying 47976 - 48000 of 73697
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