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Displaying 40776 - 40800 of 74225

Proceedings of the LADAR Calibration Facility Workshop, June 12-13, 2003

October 1, 2003
Author(s)
Geraldine S. Cheok
The use and scope of LADAR applications continues to expand as the technology matures, but standard protocols or procedures for calibrating and testing of LADARs have yet to be developed. While selections of LADAR instruments are generally based on the

Radiative Heat Flux Measurement Uncertainty

October 1, 2003
Author(s)
Rodney A. Bryant, C A. Womeldorf, Erik L. Johnsson, Thomas J. Ohlemiller
As part of an effort to characterize the uncertainties associated with heat flux measurements in a fire environment, an uncertainty analysis example was performed using measurement data from a room corner surface products test that followed the guidelines

Recent Progress in Polarization Mode Dispersion Measurement

October 1, 2003
Author(s)
Kent B. Rochford, Paul Leo, D Peterson, Paul A. Williams
Measurement of polarization mode dispersion (PMD) spans from precise component characterization of differential group delay (DGD) to system characterization of mean DGD and dynamic PMD properties. We describe recent advances and issues in these varied

Registration of Range Data from Unmanned Aerial and Ground Vehicles

October 1, 2003
Author(s)
Anthony J. Downs, Rajmohan Madhavan, Tsai Hong Hong
In the research reported in this paper, we propose to overcome the unavailability of GPS using combined information obtained froma scanning LADARrangefinder on an Unmanned Ground Vehicle (UGV) and a LADAR mounted on an Unmanned Aerial Vehicle (UAV) that

Sources of Uncertainty in the Nose-to-Nose Sampler Calibration Method

October 1, 2003
Author(s)
Nicholas Paulter, Donald R. Larson
We analyze the nose-to-nose (ntn) method for use as an accurate sampler calibration method. The variations in the measurement of the sampler impulse response using the ntn method are presented, and the validity of the assertion that the kick-out pulse is

Space-Scale Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

October 1, 2003
Author(s)
Ndubuisi G. Orji, Jayaraman Raja, Theodore V. Vorburger, Xiaohong Gu
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Stoichiometric Preference in Copper-Promoted Oxidative DNA Damage by Ochratoxin A

October 1, 2003
Author(s)
R A. Manderville, W M. Calcutt, J Dai, G Park, I G. Gillman, R E. Noftle, A K. Mohammed, M. Dizdaroglu, H Rodriguez, S A. Akman
The ability of the fungal carcinogen, ochratoxin A (OTA, 1), to facilitate copper-promoted oxidative DNA damage has been assessed using supercoiled plasmid DNA (Form I)/agarose gel electrophoresis and gas chromatography/mass spectrometry with selected-ion

The Effect of Anisotropic Surface Energy on the Rayleigh Instability

October 1, 2003
Author(s)
Katharine F. Gurski, Geoffrey B. McFadden
We determine the linear stability of a rod or wire subject to capillary forces arising from an anisotropic surface energy. The rod is assumed to be smooth with a uniform cross section given by a 2-D equilibrium shape. The stability analysis is based on

Thermal Imaging of Metals in a Kolsky-Bar Apparatus

October 1, 2003
Author(s)
Howard W. Yoon, D Basak, Richard L. Rhorer, Eric P. Whitenton, Timothy J. Burns, Richard J. Fields, Lyle E. Levine
For materials testing at elevated temperatures, we describe the design and the development of a resistively heated Kolsky-bar apparatus. The temperature of the sample is determined by non-contact thermometry and the spatial temperature gradients in the

Thirteenth International Conference on Computer Technology in Welding

October 1, 2003
Author(s)
Thomas A. Siewert, William G. Rippey
The Thirteenth International Conference on Computer Technology in Welding was held June 18, 2003 in Orlando, Florida, under the sponsorship of the American Welding Society, the National Institute of Standards and Technology (NIST), and The Welding Institue

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

October 1, 2003
Author(s)
Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer
Displaying 40776 - 40800 of 74225
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