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Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Published

Author(s)

Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi

Abstract

A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with frequency f of 1 MHz and the phase shift of π, current staircases quantized in units of ef are observed in drain current vs. drain voltage characteristics at 25 K.
Citation
Japanese Journal of Applied Physics
Volume
42

Keywords

current standard, nanotechnology, silicon-on-insulator, single-electron transistor, single-electron turnstile

Citation

Ono, Y. , Zimmerman, N. , Yamazaki, K. and Takahashi, Y. (2003), Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor, Japanese Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31330 (Accessed May 25, 2024)

Issues

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Created September 30, 2003, Updated October 12, 2021