Ono, Y.
, Zimmerman, N.
, Yamazaki, K.
and Takahashi, Y.
(2003),
Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor, Japanese Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31330
(Accessed May 3, 2024)
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Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
Published
Author(s)
Yukinori Ono, , Kenji Yamazaki, Yasuo Takahashi
Abstract
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with frequency f of 1 MHz and the phase shift of π, current staircases quantized in units of ef are observed in drain current vs. drain voltage characteristics at 25 K.Citation
Japanese Journal of Applied Physics
Volume
42
Pub Type
Journals
Download Paper
Keywords
current standard, nanotechnology, silicon-on-insulator, single-electron transistor, single-electron turnstile
Citation
Created September 30, 2003, Updated October 12, 2021