Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer synchronized with ac gate biases. By applying ac biases to the dual gates with frequency f of 1 MHz and the phase shift of π, current staircases quantized in units of ef are observed in drain current vs. drain voltage characteristics at 25 K.
current standard, nanotechnology, silicon-on-insulator, single-electron transistor, single-electron turnstile
, Zimmerman, N.
, Yamazaki, K.
and Takahashi, Y.
Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor, Japanese Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31330
(Accessed December 10, 2023)