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Displaying 40776 - 40800 of 73697

Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide

June 1, 2003
Author(s)
H S. Bennett, Howard Hung
The majority electron density as a function of the Fermi energy is calculated in Zinc Blende, n-type GaSb for donor densities between 10 16 cm -3 and 10 19 cm -3. These calculations solve the charge neutrality equation self-consistently for a four-band

Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists

June 1, 2003
Author(s)
Ronald L. Jones, C G. Willson, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque
The focus of this paper is the form of spatial heterogeneity of deprotection at the eventual pattern edge. The form results from the packing of fuzzy blobs consisting of volumes of deprotection created by individual photogenerated acids. The form and size

Design and Performance of Capping Layers for EUV Multilayer Mirrors

June 1, 2003
Author(s)
Sasa Bajt, H N. Chapman, Nhan Nguyen, J Alameda, J C. Robinson, M Malinowski, E Gullikson, Andrew Aquila, Charles Tarrio, Steven Grantham
The reflectance stability of multilayer coatings for extreme ultraviolet lithography (EUVL) in a commercial tool environment is of utmost importance to ensure continuous exposures with minimum maintenance cost. We have made substantial progress in

Electronics for Arrays of Transition Edge Sensors using Digital Signal Processing

June 1, 2003
Author(s)
Sae Woo Nam, Joern Beyer, Gene C. Hilton, Kent D. Irwin, Carl D. Reintsema, John M. Martinis
Single-pixel transition-edge sensors (TES) are useful for a variety of applications requiring the detection of photons from sub-millimeter wavelengths to gamma rays. Arrays of TESs are required in the next-generation instruments to continue to be useful

Energy Distribution of Interface Traps in High-K Gated MOSFETs

June 1, 2003
Author(s)
Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher in the

Enhancing Virtual Product Representation for Advanced Design Repository Systems

June 1, 2003
Author(s)
Simon Szykman, Matt Bohm, RJ B. Stone
This paper describes the transformation of an existing set of heterogeneous product knowledge into a coherent design re-pository that supports product information archival, storage and reuse. Existing product information was analyzed and compared against

Evolutions in Hardness Scales Definition

June 1, 2003
Author(s)
G Barbato, A G. Germak, K -. Herrmann, Samuel Low
A conventional characteristic of hardness measurements in the strong dependency on the official definition of each scale. For this reason, and to assure a good connection between National Metrology Institutes (NMIs), scientific organizations (e.g., IMEKO1

Flexible Modeling and Simulation for Mass Customization Manufacturing

June 1, 2003
Author(s)
Guixiu Qiao, R F. Lu, Frank H. Riddick
Mass Customization Manufacturing (MCM) systems possess special characteristics that make the modeling of such systems extremely difficult. These characteristics include concurrency, synchronization, and cooperation among subsystems. To support the

Fracture Toughness of Toughened Silicon Nitride by ASTM C 1421

June 1, 2003
Author(s)
George D. Quinn, J Swab, M J. Motyka
The fracture toughness of a commercial sintered reaction-bonded silicon nitride was measured by the three complementary test methods in ASTM C 1421. Precracks ranged from tiny artificial flaws introduced by Knoop indentation to millimeter long precracks in

Functional Tolerancing of a Gearbox

June 1, 2003
Author(s)
H Wang, Utpal Roy, Sudarsan Rachuri, Ram D. Sriram, Kevin W. Lyons
This paper proposes a scheme for the tolerance specification that uses the features? function information and mating condition attributes in the assembly to derive an appropriate tolerance specification as per the design intents. The proposed mirror method

Growth of superconducting single crystals

June 1, 2003
Author(s)
Debra L. Kaiser, L.F. Schneemeyer
This manuscript is a review of single crystal growth of high temperature superconducting materials. The introductory sections cover fundamentals of crystal growth with emphasis on special considerations for superconducting compounds, and the growth

Impact of Technical Noise on Supercontinuum Generation in Microstructure Fiber

June 1, 2003
Author(s)
Brian Washburn, Kristan L. Corwin, Nathan R. Newbury, R Windeler
The influence of the input laser technical noise on the noise of a generated supercontinuum is experimentally and numerically investigated. The supercontinuum technical noise is an amplified version of the input technical noise.

Inter- and Intergenerational Transmission of a Human Mitochondrial DNA Heteroplasmy Among 13 Maternally-Related Individuals and Differences Between and Within Tissues in Two Family Members

June 1, 2003
Author(s)
Koji Sekiguchi, K Kasai, Barbara C. Levin
The transmission of a C16,291C/T heteroplasmy in the HV1 region of human mitochondrial DNA (mtDNA) was examined in buccal cells from 13 maternally-related individuals across three generations and in additional tissues (hair, blood or finger nails) from

Interpreting the Signal From a Localized Fluorescence Sensor: A Study By Angle Resolved-XPS and Dynamic SIMS

June 1, 2003
Author(s)
D L. Woerdeman, W Ou, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Richard~undefined~undefined~undefined~undefined~undefined Parnas
Angle-resolved X-ray Photoelectron Spectroscopy (XPS) and Dynamic Secondary Ion Mass Spectroscopy (DSIMS) experiments were conducted to assess the interactions between a diamine curing agent and a glycidoxysilane-modified glass substrate. This effort was
Displaying 40776 - 40800 of 73697
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