Energy Distribution of Interface Traps in High-K Gated MOSFETs
Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher in the upper half of the bandgap than that in the lower half of the bandgap. These results are consistent with the observation that n-channel mobilities are more severely degraded than p-channel mobilities when compared to conventional MOSFET's with SiO2 as the gate dielectric. The results were verified by capacitance-voltage (C-V) and ac conductance techniques.
Tech. Dig., VLSI Technology
June 10-14, 2003
Kyoto, 1, JA
2003 Symposia on VLSI Technology and Circuits
C-V, ac-conductance, capture cross-section, energy distribution, high k gated MOSFETs, interface trap density, charge pumping
, Vogel, E.
, Gusev, E.
, D'Emic, C.
, Richter, C.
, Heh, D.
and Suehle, J.
Energy Distribution of Interface Traps in High-K Gated MOSFETs, Tech. Dig., VLSI Technology, Kyoto, 1, JA
(Accessed December 3, 2023)