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Displaying 39926 - 39950 of 73960

Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb

January 1, 2004
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang, D A. Shiau
GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization

Nonlinearity measurement of high power laser detectors at NIST

January 1, 2004
Author(s)
Xiaoyu X. Li, Thomas Scott, Shao Yang, Christopher L. Cromer, Marla L. Dowell
We briefly explain the fundamentals of detector nonlinearity applicable to both electrical and optical nonlinearity measurements. We specifically discuss the attenuation method for optical nonlinearity measurement that the NIST system is based upon, and we
Displaying 39926 - 39950 of 73960
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