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Displaying 38901 - 38925 of 73829

Pulse Parameter Dependence on Transition Occurrence Instant and Waveform Epoch

May 20, 2004
Author(s)
Donald R. Larson, Nicholas Paulter, David I. Bergman
The pulse parameters of amplitudeds and transition duration (10% to 90 %) are examined as a function of the epoch and position of the transition edge in the epoch. The primary explanations for the observed variations are the pulse aberrations and the

The Effect of Tilt on Waveform State Levels and Pulse Parameters

May 20, 2004
Author(s)
Nicholas Paulter, Donald R. Larson
Tilt is the slope in waveform values that occurs before and/or after a waveform transition. Tilt causes a bias in the computed values of waveform state levels that may affect the value of several waveform parameters. The effects of tilt on pulse parameters

Authenticating Mobile Device Users Through Image Selection

May 19, 2004
Author(s)
Wayne Jansen
Adequate user authentication is a persistent problem, particularly with mobile devices such as Personal Digital Assistants (PDAs), which tend to be highly personal and at the fringes of an organization's influence. Yet these devices are being used

Pulse Parameter Dependence on Transition Position and Epoch Duration

May 18, 2004
Author(s)
Donald R. Larson, Nicholas Paulter, David I. Bergman
The pulse parameters of amplitudes and transition duration (10% to 90%) are examined as a function of the epoch and position of the transition edge in the epoch. The primary explanations for the observed variations are the pulse aberrations and the finite

'Across-the-Road Photo Traffic Radars: New Calibration Techniques'

May 17, 2004
Author(s)
Claude Weil, Dennis G. Camell, David R. Novotny, Robert T. Johnk
We discuss simulator units for calibrating across-the-road Doppler traffic radar transceivers used in enforcement of highway speed limits. Two units of very similar design were developed, one operating at K-band (24 GHz) and the other at Ka-band (35 GHz)

Precision tests of femtosecond laser optical frequency synthesizers

May 17, 2004
Author(s)
Long-Sheng Ma, Lennart Robertsson, Massimo Zucco, Zhiyi Bi, Robert Windeler, A Bartels, G Wilpers, Christopher W. Oates, Leo W. Hollberg, Scott Diddams
We compare the accuracy of femtosecond laser optical frequency synthesizers that employ microstructured fibers with those that directly generate a broadband output. No limitation of either system is found at fractional frequency levels of 1x10 -18.

A phase locked, fiber laser-based frequency comb: limit on optical linewidth

May 16, 2004
Author(s)
Brian Washburn, Scott Diddams, Nathan R. Newbury, Jeffrey W. Nicholson, M. Yan, C. G. Jorgensen
A phase-locked fiber laser-based supercontinuum source is presented. The linewidth of a single line of the IR frequency comb produced by fiber laser-based supercontinuum source is less than or equal to}6 kHz.

Absolute frequency measurements with a stabilized near-infrared optical frequency comb from a Cr:forsterite laser

May 16, 2004
Author(s)
Kristan L. Corwin, I Thomann, Tasshi Dennis, R W. Fox, William C. Swann, E. A. Curtis, C. W. Oates, G Wilpers, A Bartels, Sarah L. Gilbert, Leo W. Hollberg, Scott Diddams, Nathan R. Newbury, Jeffrey W. Nicholson, M. Yan
A Cr:forsterite laser-based frequency comb is stabilized simultaneously to two NIST frequency references. Methane lines from 1315 nm - 1330 nm are measured with ±2.3 MHz uncertainty. The pressure shifts are also evaluated.

Cavity ring-down spectroscopy of semiconductor quantum dots

May 16, 2004
Author(s)
Joseph J. Berry, Todd E. Harvey, Richard Mirin, A Marian, Jun Ye
We employ cavity ringdown to perform absorption experiments of InGaAs/GaAs QDs. Integrating an AlAs/GaAs DBR incorporating InGaAs QD?s into a Fabry-Perot cavity, we demonstrate this approach and its potentials for sensitive measurements on semiconductor

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.

Temperature-dependent, single quantum dot single photon statistics

May 16, 2004
Author(s)
Richard P. Mirin
We describe temperature-dependent photon antibunching measurements from single InGaAs/GaAs quantum dots. The second order intensity correlation demonstrates single emitter emission up to 120 K and nonclassical light emission to 135 K.

Establishing Benchmarks for the First Industrial Fluids Simulation Challenge

May 15, 2004
Author(s)
Daniel G. Friend, David Frurip, Joe W. Magee, J Olson
In order to judge the entries in the First Fluid Properties Simulation Challenge [1], a benchmarking committee was established, comprised of the authors of this paper. The mandate of the committee was to determine best values for the physical property
Displaying 38901 - 38925 of 73829
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