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NIST Authors in Bold

Displaying 36376 - 36400 of 74151

Challenges in Characterizing Sealant

September 14, 2005
Author(s)
Christopher C. White, Donald L. Hunston
Sealant is one of the very few major consumer products valued primarily for its rheological and adhesive properties. While, these materials may appear to be simple elastic solids, upon further examination, their behavior can be extremely complex. In this

Multilayer and functional coatings on carbon nanotubes using atomic layer deposition

September 14, 2005
Author(s)
Cari F. Herrmann, F Fabreguette, Dudley Finch, Roy H. Geiss, S M. George
Atomic layer deposition can be used to deposit ultra thin and conformal films on substrates with very high aspect ratios such as nanotubes and nanowires. In this paper, we demonstrate that functionalized and multilayered ALD coatings can be deposited

NIST F1: Recent improvements and a resulting accuracy of df/f=0.53x10 -15

September 13, 2005
Author(s)
Thomas P. Heavner, Steven R. Jefferts, Elizabeth Donley, Jon H. Shirley, Tom Parker
In the last several years we have made many improvements to NIST-F1 (a laser-cooled Cs fountain primary frequency standard) resulting in over a factor of 2 reduction in the uncertainty in the realization of the SI second. The two most recent accuracy

Operation of the NIST-F1 Cesium Fountain Primary Frequency Standard with a Maser Ensemble

September 13, 2005
Author(s)
Thomas E. Parker, Steven R. Jefferts, Thomas P. Heavner, Elizabeth A. Donley
The operation of a caesium fountain primary frequency standard is greatly influenced by the characteristics of two other important capabilities. The first is a stable frequency reference and the second is the frequency-transfer system. A stable frequency

The Exact Multiplicative Complexity of the Hamming Weight Function

September 13, 2005
Author(s)
Rene C. Peralta, Joan Boyar
We consider the problem of computing the Hamming weight of an n-bit vector using a circuit with gates for addition and multiplication modulo 2 (alternatively, XOR and conjunction gates) only. The number of multiplications necessary and sufficient to build

Examination of Multicomponent Diffusion Between Two Ni-Base Superalloys

September 11, 2005
Author(s)
Carelyn E. Campbell, William J. Boettinger, T Hansen, P Merewether, B A. Mueller
The interdiffusion at 1293 degree C between two multicomponent Ni-base superalloys, Rene-N4 and ene-N5, was assessed by measuring the composition vs. distance curves and by comparing the measured curves to predictions obtained using a diffusion mobility

Observed Correlation of Sn Oxide film to Sn Whisker Growth in Sn-Cu electrodeposit for pb-free Solders

September 11, 2005
Author(s)
Kil-Won Moon, C E. Johnson, Maureen E. Williams, O Kongstein, Gery R. Stafford, C A. Handwerker, William J. Boettinger
To evaluate the effects of the oxide film on Sn whisker growth, a bright Sn-Cu electrodeposit was tested in an ultrahigh vacuum chamber with Auger analysis. After Ar+ ion beam cleaning to remove the oxide film, the sample was analyzed and stored in the

A Modular System Architecture for Agile Assembly of Nanocomponents using Optical Tweezers

September 10, 2005
Author(s)
Arvind K. Balijepalli, Thomas W. LeBrun, Cedric V. Gagnon, Yong-Gu Lee, Nicholas G. Dagalakis
In order to realize the flexibility optical trapping offers as a nanoassembly tool, we need to develop natural and intuitiveinterfaces to assemble large quantities of nanocomponents quickly and cheaply. We propose a system to create such aninterface that

A Solution for Wireless Privacy and Payments based on E-cash

September 9, 2005
Author(s)
A Karygiannis, Y. Tsiounis, A. Kayias
With wireless capable devices becoming more and more accessible, there is an increasing need for standardization of wireless networking. One of the most utilized standards that is deployed by many current devices (including theWindows XP OS) for building

Issues in Line Edge and Linewidth Roughness Metrology

September 9, 2005
Author(s)
John S. Villarrubia
In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen sampling

Wetting-Dewetting Transition Line in Thin Polystyrene Films

September 9, 2005
Author(s)
H Raghavan, K M. Ashley, A Seghal, Jack F. Douglas, Alamgir Karim
We review recent advances in the application of combinatorial methods to polymer thin film characterization. Combinatorial methods allow the rapid exploration of multidimensional parameter spaces that naturally arise in the description of polymer film

A Unifying Standard for Interfacing Transducers to Networks IEEE-1451.0

September 8, 2005
Author(s)
James Wiczer, Kang B. Lee
A committee of industry and government technology experts has completed a three-year effort to develop a set of specifications that consist of a unifying set of functions, communications protocols, a common set of commands, and electronic data sheet

Indoor Positioning Using Spatial Spectrum

September 7, 2005
Author(s)
Kamran Sayrafian
We have implemented a quantum key distribution (QKD) system with polarization encoding at 850 nm over 1 km of optical fiber. The high-speed management of the bit-stream, generation of random numbers and processing of the sifting algorithm are all handled

Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier

September 5, 2005
Author(s)
Seongshik Oh, Katarina Cicak, Kevin Osborn, Raymond Simmonds, David P. Pappas, Robert Mcdermott, Ken B. Cooper, Matthias Steffen, John M. Martinis
We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as
Displaying 36376 - 36400 of 74151
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