Oh, S.
, Cicak, K.
, Osborn, K.
, Simmonds, R.
, Pappas, D.
, Mcdermott, R.
, Cooper, K.
, Steffen, M.
and Martinis, J.
(2005),
Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier, Superconductor Science and Technology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32036
(Accessed April 23, 2024)
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Low-Leakage Superconducting Tunnel Junctions with a Single-Crystal Al2O3 Barrier
Published
Author(s)
, , , , , Robert Mcdermott, Ken B. Cooper, Matthias Steffen,
Abstract
We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that, by first growing an amorphous Al oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current with a quality factor of 1200. This leakage-free single-crystal Al2O3 junction has opened a new venue for coherent quantum devices.Citation
Superconductor Science and Technology
Volume
18
Issue
10
Pub Type
Journals
Download Paper
Keywords
Al2O3, Epitaxy, Tunnel Junction
Citation
Created September 4, 2005, Updated October 12, 2021