Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 34651 - 34675 of 73832

Poisson transition rates from time-domain measurements with finite bandwidth

March 17, 2006
Author(s)
Ofer Naaman, Joe Aumentado
We show that in realistic time-domain measurements of a Poisson two-level system, the observed transition rates are renormalized downwards due to the finite bandwidth of the experiment. This effect introduces systematic errors in estimating the system''s

Fast Setting CPC-Chitosan Composite: Mechanical Properties and Dissolution Rates

March 16, 2006
Author(s)
Limin Sun, Hockin D. Xu, Shozo Takagi, Laurence C. Chow
Calcium phosphate cement (CPC) can self-harden in vivo to form hydroxyapatite with excellent osteoconductivity. In recent studies, CPC-chitosan composites were developed with high mechanical strength and washout resistance. The objectives of the present

Frequency-Resolved Coherent LIDAR using a Femtosecond Fiber Laser

March 15, 2006
Author(s)
William C. Swann, Nathan R. Newbury
We demonstrate a coherent lidar that uses a broadband femtosecond fiber laser as a source and resolves the returning heterodyne signal into N spectral channels by using an arrayed-waveguide grating. The data are processed incoherently to yield an N-times

Alkanethiols on Platinum: Multicomponent Self-Assembled Monolayers

March 14, 2006
Author(s)
D Y. Petrovykh, H Y. Kimura-Suda, A Opdahl, Lee J. Richter, Michael J. Tarlov, L J. Whitman
We have studied the formation of self-assembled monolayers (SAMs) of n-alkanethiols on platinum thin films using X-ray photoelectron spectroscopy (XPS), reflection-absorption infrared spectroscopy (RAIRS), spectroscopic ellipsometry (SE), and contact angle

Effects of Humidity on Unencapsulated Poly(thiophene) Thin Film Transistors

March 13, 2006
Author(s)
Michael L. Chabinyc, Fred Endicott, B D. Vogt, Dean DeLongchamp, Eric K. Lin, Yiliang Wu, Ping Liu, Beng S. Ong
The effects of humidity on unencapsulated polymeric thin-film transistors (TFTs) were investigated. TFTs were fabricated on glass substrates with inorganic gate dielectric and a semiconducting layer of poly[5,5 -bis(3-dodecyl-2-thienyl)-2,2 -bithiophene]

High Throughput Microfluidic Light Scattering for Aqueous Polymer Solutions

March 10, 2006
Author(s)
A I. Norman, Wenhua Zhang, Kathryn L. Beers, Eric J. Amis
A small-angle light scattering (SALS) apparatus, coupled with a specially designed microfluidic device was used, to monitor the structure of a diblock copolymer in aqueous solution. The closed-face design was fabricated between glass slides using a UV

Optical Properties of Fluids For 248 nm and 193 nm Immersion Photolithography

March 10, 2006
Author(s)
Simon G. Kaplan, John H. Burnett
We present measured values of the refractive index, thermo-optic coefficient, and absorption coefficient of a number of common organic solvents and aqueous inorganic solutions that may have application in immersion photolithography at 248 nm or 193 nm

Influence of surface energy and relative humidity on AFM nanomechanical contact stiffness

March 9, 2006
Author(s)
Donna C. Hurley, Malgorzata Kopycinska-Mueller, D Julthongpiput, Michael J. Fasolka
The effects of surface functionality and relative humidity (RH) on nanomechanical properties were investigated using atomic force acoustic microscopy (AFAM), a contact scanned probe microscopy (SPM) technique. Self-assembled monolayers (SAMs) with

Optical frequency measurements of 6s 2 S 1/2 - 6p 2 P 1/2 (D 1 )transitions in 133 Cs and their impact on the fine-structure constant

March 8, 2006
Author(s)
Vladislav Gerginov, K Calklins, B Tanner, John J. McFerran, Scott A. Diddams, Albrecht Bartels, Leo W. Hollberg
High resolution laser spectroscopy of 6s 2S 1/2 – 6p 2P 1/2 transition (D 1 line) in neutral 133Cs is performed in a highly collimated thermal atomic beam using a femtosecond laser frequency comb and narrow linewidth diode laser. The diode laser is offset

Optical frequency measurements of 6s 2 S 1/2 - 6p 2 P 1/2 (D1) transitions in 133 Cs and their impact on the fine-structure constant

March 8, 2006
Author(s)
Vladislav Gerginov, K Calklins, Carol Tanner, John J. McFerran, Scott A. Diddams, A Bartels, Leo W. Hollberg
High resolution laser spectroscopy of 6s 2S 1/2 – 6p 2P 1/2 transition (D1 line) in neutral 133Cs is performed in a highly collimated thermal atomic beam using a femtosecond laser frequency comb and narrow linewidth diode laser. The diode laser is offset

Radio Communications for Emergency Responders in Large Public Buildings: Comparing Analog and Digital Modulation

March 7, 2006
Author(s)
Catherine A. Remley, Marc Rutschlin, Dylan F. Williams, Robert T. Johnk, Galen H. Koepke, Christopher L. Holloway, Mike G. Worrell, Andy MacFarlane
To assess in-building radio coverage, in 2004 the City of Phoenix Fire Department carried out extensive testing of their radio systems. They deployed firefighters in standard configurations in a variety of buildings, and rated on a scale of 1 to 5 the

RFID-Assisted Indoor Localization and Communication for First Responders

March 7, 2006
Author(s)
Leonard E. Miller, Perry F. Wilson, Nelson P. Bryner, Michael H. Francis, Jeffrey R. Guerrieri, D W. Stroup, Luke Klein-Berndt
An indoor localization and communication project is described that proposes to use RFID tags, placed in the building beforehand, as navigation waypoints for an inertial navigation system carried by a first responder. The findings from the first year of the

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

March 7, 2006
Author(s)
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart Martin
Single-electron tunnelling (SET) transistors 1 are now of great and wide interest as basic elements for future applications such as low-power nanoelecronics 2 and read-out electrometer for solid-state quantum computing 3. Silicon SET devices 4 have great

Early Results From the NIST M48 CMM in the New AML Facility

March 3, 2006
Author(s)
John R. Stoup, Bryon S. Faust, Theodore D. Doiron
The Advanced Measurement Laboratory at NIST in Gaithersburg has already provided real, measurable improvement in some dimensional metrology measurement processes at NIST, most notably in the performance of the NIST Moore M48 coordinate measuring machine1
Displaying 34651 - 34675 of 73832
Was this page helpful?