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Displaying 1426 - 1450 of 2521

Mechanism of Fillet Lifting in Sn-Bi Alloys

May 1, 2002
Author(s)
William J. Boettinger, C A. Handwerker, B Newbury, TG Y. Pan, J M. Nicholson
… with compositions between 2.6 and 65 mass percent Bi. A 20 pin ceramic dual inline package was soldered to printed …

Index of Refraction of Air

February 16, 2001
Author(s)
Jack A. Stone Jr., Jay H. Zimmerman
… use at temperatures departing substantially from 20 degrees C. The text accompanying the calculations explains …

Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy

February 1, 2001
Author(s)
Duncan McBride, Joseph Kopanski
Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to form a
Displaying 1426 - 1450 of 2521
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