Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-Ray Absorption Spectroscopy and SIMS

Published

September 1, 2000

Author(s)

M A. Sahiner, S W. Novak, Joseph Woicik, J Liu, V Krishnamoorty

Abstract

EXAFS and SIMS have been used to obtain clustering and precipitation information in As (arsenic) implanted Si wavers. CZ (001) Siwafers were first implanted by As⁺ at 100 keV to a dose of 1x10¹⁵/cm² followed by a second As⁺ implantation at 20-30 keV with doses of 1x10¹⁵/cm²-1X10^18/cmu2^. From the SIMS concentration depth profiles and the corresponding UT-MARLOWE simulations, the region where the As-concentration is above the solid solubility level was determined. The coordination numbers (N) and the nearest-neighbor distances (R) to As atoms in the first shell were extracted from Fourier analysis of the EXAFS data. When arsenic precipitates as monoclinic SiAs, the nearest neighbor distances and coordination numbers are 2.36 Angstrom} and 3, as opposed to 2.40 Angstrom} and 4 when As is substitutional. Based on this information, the critical implant dose where the precipitation of As starts, and the ratio of the substitutional to precipitate form As in the samples was determined.

Proceedings Title

Ion Implementation Technology, International Conference | 13th | | IEEE

Volume

2000

Issue

13th

Conference Dates

September 17-22, 2001

Conference Location

Alpbach, 1, AU

Conference Title

International Conference on Ion Implementation Technology

Pub Type

Conferences

Keywords

As (arsenic), EXAFS, Si wafers, UT-MARLOWE

Citation

Sahiner, M. , Novak, S. , Woicik, J. , Liu, J. and Krishnamoorty, V. (2000), Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-Ray Absorption Spectroscopy and SIMS, Ion Implementation Technology, International Conference | 13th | | IEEE, Alpbach, 1, AU (Accessed April 24, 2024)