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Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-Ray Absorption Spectroscopy and SIMS

Published

Author(s)

M A. Sahiner, S W. Novak, Joseph Woicik, J Liu, V Krishnamoorty

Abstract

EXAFS and SIMS have been used to obtain clustering and precipitation information in As (arsenic) implanted Si wavers. CZ (001) Siwafers were first implanted by As+ at 100 keV to a dose of 1x1015/cm2 followed by a second As+ implantation at 20-30 keV with doses of 1x1015/cm2-1X1018/cmu2^. From the SIMS concentration depth profiles and the corresponding UT-MARLOWE simulations, the region where the As-concentration is above the solid solubility level was determined. The coordination numbers (N) and the nearest-neighbor distances (R) to As atoms in the first shell were extracted from Fourier analysis of the EXAFS data. When arsenic precipitates as monoclinic SiAs, the nearest neighbor distances and coordination numbers are 2.36 Angstrom} and 3, as opposed to 2.40 Angstrom} and 4 when As is substitutional. Based on this information, the critical implant dose where the precipitation of As starts, and the ratio of the substitutional to precipitate form As in the samples was determined.
Proceedings Title
Ion Implementation Technology, International Conference | 13th | | IEEE
Volume
2000
Issue
13th
Conference Dates
September 17-22, 2001
Conference Location
Alpbach, 1, AU
Conference Title
International Conference on Ion Implementation Technology

Keywords

As (arsenic), EXAFS, Si wafers, UT-MARLOWE

Citation

Sahiner, M. , Novak, S. , Woicik, J. , Liu, J. and Krishnamoorty, V. (2000), Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-Ray Absorption Spectroscopy and SIMS, Ion Implementation Technology, International Conference | 13th | | IEEE, Alpbach, 1, AU (Accessed March 4, 2024)
Created August 31, 2000, Updated October 12, 2021