A Systematic Approach for Multidimensional, Closed-Form Analytical Modeling: Minority Electron Mobilities in Ga1-x Alx As Heterostructures

Published

June 1, 2000

Author(s)

Herbert S. Bennett, James J. Filliben

Abstract

A significant, practical challenge, which arises in developing computationally efficient physical models for use in computer simulations of microelectronic and optoelectronic devices (e.g., transistors in digital cellular phones and in laser modulators, respectively), is to represent vast amounts of numerical data for transport properties in two or more dimensions in terms of closed form analytic expressions. In this paper, we present a general methodology to achieve the above goal for a class of numerical data in a bounded two-dimensional space. We then apply this methodology to obtain a closed-form analytic expression for the minority electron mobilities at 300 K in p-type Ga_1-mAl_mAs as functions of the acceptor density, N_A, between 10¹⁴ cm^-3 and 10²⁰ cm^-3 and the mole fraction of AlAs, m, between 0.0 and 0.3. This methodology and its associated principles, strategies, regression analyses, and graphics are expected to be applicable to other problems beyond the specific case of minority mobilities addressed in this paper.

Citation

Journal of Research (NIST JRES) -

Volume

105

Issue

3

NIST Pub Series

Journal of Research (NIST JRES)

Pub Type

NIST Pubs

Keywords

electron mobilities, melding functions, regression analyses, standard deviations

Citation

Bennett, H. and Filliben, J. (2000), A Systematic Approach for Multidimensional, Closed-Form Analytical Modeling: Minority Electron Mobilities in Ga_1-x Al_x As Heterostructures, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD (Accessed April 26, 2024)