Noise Temperature for Nb DHEB Mixer Receiver for Far-Infrared Spectroscopy

Published

September 1, 2002

Author(s)

Eyal Gerecht, Carl D. Reintsema, Erich N. Grossman, A. L. Betz, R. T. Boreiko

Abstract

We are reporting a noise temperature measured on a diffusion-cooled hot electron bolometeric (DHEB) mixer designed for a heterodyne focal plane array to study lines with frequencies of 2 THz and above. Our fabrication process utilizes selective ion milling techniques to produce Nb diffusion-cooled hot electron bolometeric mixers from a bi-layer thin film of gold/Nb deposited on a silicon substrate. A micro-bridge of 10 nm thick Nb forms the HEB device. The devices are fabricated at the leads of a broad band spiral antenna with a frequency response of up to 20 THz. An FIR laser was used as the LO source at 2.52 THz (119 mm). A double-sideband (DSB) receiver noise temperature of 2500 K was measured. The IF frequency determined by the cold amplifier was centered at 1 GHz. This noise temperature result is not corrected for loses and mismatches and was performed at a bath temperature of 2 K. The device has a critical temperature (Tc) of 6 K with a 0.5 K transition width.

Proceedings Title

Proc., Intl Symp. on Space Terahertz Tech.

Conference Dates

March 26-28, 2002

Conference Location

Cambridge, MA, USA

Pub Type

Conferences

Keywords

hot electron bolometers, mixers, superconducting devices, terahertz technology

Citation

Gerecht, E. , Reintsema, C. , Grossman, E. , Betz, A. and Boreiko, R. (2002), Noise Temperature for Nb DHEB Mixer Receiver for Far-Infrared Spectroscopy, Proc., Intl Symp. on Space Terahertz Tech., Cambridge, MA, USA (Accessed January 19, 2025)