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Displaying 47226 - 47250 of 74445

P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

January 1, 2001
Author(s)
David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si

PARCS: A Laser-Cooled Atomic Clock in Space

January 1, 2001
Author(s)
Thomas P. Heavner, Leo W. Hollberg, Steven R. Jefferts, Hugh Robinson, Donald Sullivan, F L. Walls, Neil Ashby, W Klipstein, L Maleki, D Seidel, R Q. Thompson, L Young, E Mattison, R Vessot, A Demarchi
Displaying 47226 - 47250 of 74445
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