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Metrology

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Displaying 2476 - 2500 of 2718

Tip and Surface Reconstruction in Scanned Probe Microscopy

January 1, 1997
Author(s)
John S. Villarrubia
The non-vanishing size of tips in scanned probe microscopes (e.g., atomic force microscope or scanning tunneling microscope) results in imaging errors. Correction of these errors requires estimation of the tip shape (tip reconstruction) followed by

Is Your Scanning Electron Microscope Hi-Fi?

December 7, 1996
Author(s)
Andras Vladar, Michael T. Postek, S Davilla
The scanning electron microscope (SEM) historically has been used mainly as an image-producing device and, in spite of certain obvious and sometimes serious electronics problems, serves in this function as an acceptable and effective instrument for many

Error Compensation for CMM Touch Trigger Probes

October 1, 1996
Author(s)
William T. Estler, Steven D. Phillips, Bruce R. Borchardt, Ted Hopp, G Witzgall, M Levenson, K Eberhardt, Marjorie A. McClain, Y Shen, X Zhang
We present the analysis of a simple mechanical model of a common type of kinematic seat touch trigger probe widely used on modern coordinate measuring machines (CMMs). The model provides a quantitative description of the pretravel variation or probe-lobing

Stylus-Laser Surface Calibration System

October 1, 1996
Author(s)
Theodore V. Vorburger, Jun-Feng Song, T Giauque, Thomas Brian Renegar, Eric P. Whitenton, M Croarkin
A stylus-laser surface calibration system was developed to calibrate the NIST sinusoidal roughness Standard Reference Materials (SRM) 2071-2075. Step height standards are used to calibrate the stylus instrument in the vertical direction, and a laser

New Certified Length Scale for Microfabrication Metrology

September 1, 1996
Author(s)
James E. Potzick
The National Institute of Standards and Technology is developing a dimensional pitch standard covering the range 1 micrometers to 10 mm, intended for the calibration of microscope magnification and of dimensional metrology instrument scales. Called SRM

Stitching of Equatorial Profiles for Extended Spatial Range Assessment

August 1, 1996
Author(s)
P Sullivan, R E. Parks, Lianzhen Shao
This paper describes a method for stitching multiple overlapping interferometric measurements of the equator of a high quality sphere to produce a single profile representing the roundness of the ball. The resulting optical profile measurement is compared

Calibration of Scanning Electron Microscope Magnification Standards SRM-484

May 1, 1996
Author(s)
Joseph Fu, Theodore V. Vorburger, D Ballard
Standard Reference Material (SRM) 484 is an artifact for calibrating the magnification scale of a scanning electron microscope. Since 1977 the National Institute of Standards and Technology (NIST) has produced seven issues of SRM484 amounting to

Electrical Test Structures Replicated in Silicon-On-Insulator Material

May 1, 1996
Author(s)
Michael W. Cresswell, J Sniegowski, Rathindra Ghoshtagore, Robert Allen, L Linholm, John S. Villarrubia
Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this

High Accuracy Overlay Measurements

May 1, 1996
Author(s)
Richard M. Silver, James E. Potzick, Fredric Scire, Robert D. Larrabee
The reduced critical dimensions of semiconductor devices place more stringent requirements on the precision and accuracy of overlay metrology tools used to monitor stepper feature placement. The use of mix and match stepper techniques and step and scan

High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope

May 1, 1996
Author(s)
J R. Lowney, Andras Vladar, Michael T. Postek
Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced

Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology

May 1, 1996
Author(s)
Ronald G. Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but also

New Algorithm for the Measurement of Pitch in Metrology Instruments

May 1, 1996
Author(s)
Nien F. Zhang, Michael T. Postek, Robert D. Larrabee, L Carroll, William J. Keery
Traditionally, the measurement of pitch in metrology instruments is thought to be a benign self-compensating function. However, as the measurement uncertainty of metrology instruments is pushed to the nanometer level, evaluation of the performance of the

SEM Performance Evaluation Using the Sharpness Criterion

May 1, 1996
Author(s)
Michael T. Postek, Andras Vladar
Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or

Models for Relating Scanning Electron Microscopy Images to Measured Artifacts

April 1, 1996
Author(s)
Michael T. Postek, Andras Vladar, J R. Lowney
A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results were
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