High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope

Published

May 1, 1996

Author(s)

J R. Lowney, Andras Vladar, Michael T. Postek

Abstract

Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced lithographically on multi-layer substrates. The second discussed, MONSEL-III, is an extension to fully three-dimensional targets. Results are given for a 1 micrometer step etched in a silicon substrate and compared with experimental data. The comparisons show that it is possible to obtain edge locations to an uncertainty of less than 10 nm. Simulations are also given for photoresist lines on a silicon substrate coated with a layer of photoresist. Techniques are developed for simulating signals for finite beam diameter from those for zero beam diameter, and for extracting signals approximating zero beam diameter from those with finite beam diameter.

Proceedings Title

Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography X, Susan K. Jones, Editor

Volume

2725

Conference Location

Santa Clara, CA, USA

Pub Type

Conferences

Citation

Lowney, J. , Vladar, A. and Postek, M. (1996), High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope, Proceedings of SPIE, Metrology, Inspection, and Process Control for Microlithography X, Susan K. Jones, Editor, Santa Clara, CA, USA (Accessed April 26, 2026)

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