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Manufacturing

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Displaying 1626 - 1650 of 2179

NIST Reference Material (RM) 8240/2350 Project-Standard Bullets and Casings

January 1, 2003
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Li Ma, M Ols, Eric P. Whitenton
Standard bullets and casings are currently under development to support the National Integrated Ballistics Information System (NIBIN) in the U.S. Based on a numerically controlled diamond turning technique, 20 RM 8240 standard bullets were fabricated in

Numerical Experiments in Scattering by a Dielectric Wedge

January 1, 2003
Author(s)
Egon Marx
A general discussion of the scattering of plane monochromatic waves by dielectric wedges precedes this paper. Numerical solutions of the problem of scattering by a dielectric wedge of finite cross section, with special emphasis on the divergent behavior of

Photomask Dimensional Metrology in the SEM Part I: Has Anything Really Changed?

January 1, 2003
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and

Scale-Space Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

January 1, 2003
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Scattering by Wedges

January 1, 2003
Author(s)
Egon Marx
Some of the components of the fields produced by an incident plane monochromatic wave scattered by a wedge diverge near the edge of the wedge. Rigorous solutions for the fields scattered by a perfectly conducting infinite wedge have been obtained, but this

Surface Finish and Sub-Surface Metrology

January 1, 2003
Author(s)
Theodore V. Vorburger, Ndubuisi George Orji, Li Piin Sung, T Rodriguez
Surface finsih affects the performance of a wide variety of manufactured products ranging from road surfaces and ships to mechanical parts, microelectronics, and optics. Accordingly roughness values can vary over many orders of magnitude. A variety of

Surface Metrology Software Variability in Two-Dimensional Measurements

January 1, 2003
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Xiaohong Gu, Jayaraman Raja
A range of surface texture measurement instruments is available in the market place. Most of the measurement instruments are microcomputer-based systems that contain their own surface analysis software to evaluate measured roughness profiles. After a

The Validation of CMM Task Specific Measurement Uncertainty Software

January 1, 2003
Author(s)
Steven D. Phillips, Bruce R. Borchardt, A Abackerli, Craig M. Shakarji, Daniel S. Sawyer, P Murray, B Rasnick, K Summerhays, J M. Baldwin, M P. Henke
Task specific CMM measurement uncertainty statements can be generated using computer (Monte Carlo) simulation. Recently, commercial products using this powerful technique have become available; however they typically involve megabytes of code inaccessible

Updated NIST Photomask Linewidth Standard

January 1, 2003
Author(s)
James E. Potzick, J Pedulla, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

Workshop Summary Report: Scanning Probe Nanolithography Workshop

January 1, 2003
Author(s)
John A. Dagata, H Yokoyama, F Perez-murano
A workshop on Scanning Probe Microscope (SPM)-based Nanolithography was held at NIST Gaithersburg on November 24-25, 2003. The meeting was sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Research

New NIST Photomask Linewidth Standard

December 1, 2002
Author(s)
James E. Potzick, J Pedulla, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

Photomask Dimensional Metrology in the SEM: Has Anything Really Changed?

December 1, 2002
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and

Standards for Bullets and Casings

November 1, 2002
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Eric P. Whitenton, Li Ma, Susan M. Ballou
The National Institute of Standards and Technology is developing reference standards through its Office of Law Enforcement Standards with funding provided by the National Institute of Justice. The standard reference materials are used by crime laboratories

Towards a Formal Representation of Driving Behaviors

October 28, 2002
Author(s)
Craig I. Schlenoff, Michael Gruninger
To successfully perform their required tasks, intelligent information agents require accurate and meaningful communication and integration among other agents and information resources. However, the applications and infrastructure of information technology

Atomic Force Microscopy of Semiconductor Line Edge Roughness

October 1, 2002
Author(s)
N G. Orji, Jayaraman Raja, Theodore V. Vorburger
Over the last two decades the width of patterned lines on semiconductor devices has continuously decreased. Based on technology trends predicted by the International Technology Roadmap for Semiconductors (ITRS), the linewidth of isolated gate lines on

NIST RM (Reference Material) 8240/8250 Standard Bullets and Casings Project

September 1, 2002
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Susan M. Ballou, M Ols
The NIST RM (Reference Material) 8240/8250 Standard Bullets and Casings Project aims to support the National Integrated Ballistics Information Network (NIBIN) in the U.S. Two prototype standard bullets were developed in 1998 with all six lands manufactured

Tolerancing Form Deviations for Rockwell Diamond Indenters

September 1, 2002
Author(s)
Jun-Feng Song, Samuel R. Low III, Li Ma
The spherical tip of Rockwell diamond indenters tends to be manufactured either a flat- or sharp-shaped surface because of the anisotropy property of the diamond. This can cause significant differences in the hardness readings. In order to control that

Establishment of Ballistics Measurement Traceability Using NIST RM 8240 Standard Bullets

August 1, 2002
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Eric P. Whitenton
The NIST RM (Reference Material) 8240 standard bullets are being developed to support the traceability of ballistics measurements nationwide. Six master bullets from ATF and FBI are measured at NIST using a stylus measurement system. The resulting set of

Standards for Optical Imaging Systems in Forensic Laboratories

August 1, 2002
Author(s)
Jun-Feng Song, Theodore V. Vorburger, Robert A. Clary, Eric P. Whitenton, Li Ma, Susan M. Ballou
NIST RM (Reverence Material) 8240/2350 standard bullet and casing project is currently ongoing to support the National Integrated Ballistics Information Network (NIBIN) in the US. The original bullet signatures were traced on six master bullets from

SRM 2460/2461 Standard Bullets and Casings Project

July 10, 2002
Author(s)
Jun-Feng Song, Eric P. Whitenton, David R. Kelley, Robert A. Clary, L Ma, Susan M. Ballou, M Ols
The National Institute of Standards and Technology (NIST) Standard Reference Material (SRM) 2460/2461 standard bullets and casings project will provide support to firearms examiners and to the National Integrated Ballistics Information Network (NIBIN) in

Comparison of Measured Optical Image Profiles of Silicon Lines with Two Different Theoretical Models

July 1, 2002
Author(s)
Richard M. Silver, Ravikiran Attota, Michael T. Stocker, Jay S. Jun, Egon Marx, Robert D. Larrabee, B Russo, M P. Davidson
In this paper we describe a new method for the separation of too-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool and
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