U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electronics

Optoelectronics

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 51 - 75 of 389

Microring resonator-coupled photoluminescence from silicon W centers

July 10, 2020
Author(s)
Alexander N. Tait, Sonia M. Buckley, Jeffrey T. Chiles, Adam N. McCaughan, Sae Woo Nam, Richard P. Mirin, Jeffrey M. Shainline
Defect centers are promising candidates for waveguide-integrated silicon light sources. We demonstrate microresonator- and waveguide-coupled photoluminescence from silicon W centers. Observations indicate that wavelengths that are on-resonance with

Superconducting microwire detectors with single-photon sensitivity in the near-infrared

June 16, 2020
Author(s)
Jeffrey T. Chiles, Sonia M. Buckley, Adriana E. Lita, Varun B. Verma, Jeffrey M. Shainline, Richard P. Mirin, Sae Woo Nam, Jason Allmaras, Boris Korzh, Emma Wollman, Matthew Shaw
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 υm to 3 υm. The devices achieve saturated internal detection efficiency at 1.55 υm wavelength and exhibit maximum count rates

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

May 10, 2020
Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electronics industry.

Comparable Enhancement of TERS signals from WeSe2 on Chromium and Gold.

April 6, 2020
Author(s)
Albert Davydov, Sergiy Krylyuk, Angela R. Hight Walker, Bojan R. Ilic, Andrey Krayev, Ashish Bhattarai, Alan G. Joly, Matej Velicky, Patrick Z. El-Khoury
Plasmonic tip-sample junctions, at which the incident and scattered optical fields are localized and optimally enhanced, are often exploited to achieve ultrasensitive and highly spatially localized tip-enhanced Raman scattering (TERS). Recent work has

Modelling photovoltaic soiling losses through optical characterization

January 9, 2020
Author(s)
Greg P. Smestad, Thomas Germer, Hameed Alrashidi, Eduardo F. Fern?ndez, Sumon Dey, Paidisetty S. Kumar, Honey Brahma, Aritra Ghosh, Nazmi Sellami, Ibrahim A. Hassan, Amal Kasry, Bala Pesala, S. Senthilarasu, Florencia Almonacid, K. S. Reddy, Tapas K. Mallick, Leonardo Micheli
The accumulation of soiling on photovoltaic (PV) modules affects PV systems worldwide. Soiling consists of mineral dust, soot particles, aerosols, pollen, fungi and/or other contaminants that deposit on the surface of PV modules. Soiling absorbs, scatters

Plasmonic Nano-antenna Optimization Using Characteristic Mode Analysis

January 3, 2020
Author(s)
Edward Garboczi, Sumitra Dey, Deb Chatterjee, Ahmed M. Hassan
Plasmonic nano-antennas are typically designed using RF-inspired parametric optimization process and/or using trial and error search algorithms which lack proper physical insight. In this study, we demonstrate how the Characteristic Mode Analysis (CMA)

A kilopixel array of superconducting nanowire single-photon detectors

November 18, 2019
Author(s)
Varun Verma, Adriana Lita, Sae Woo Nam, R P. Mirin, Emma Wollman, William Farr, Matthew Shaw
We present a 1024-element imaging array of superconducting nanowire single photon detectors (SNSPDs) using a 32x32 row-column multiplexing architecture. Large arrays are desirable for applications such as imaging, spectroscopy, or particle detection.

Nano-opto-electro-mechanical switches operated at CMOS-level voltages

November 15, 2019
Author(s)
Christian Haffner, Andreas Joerg, Michael Doderer, Daniel Chelladurai, Felix Mayor, Comsin Ioan Roman, Yuriy Fedoryshyn, Mikael Mazur, Maurizio Burla, Henri J. Lezec, Vladimir A. Aksyuk, Juerg Leuthold
Reprogrammable optical networks that operate in symbiosis with CMOS electronics promise to advance technologies such as optical neural networks. However, current electro-optical switching technologies fail to combine CMOS-voltages, micrometer-scale

Live quantification of cell viability via neutral red uptake using lens-free imaging

October 27, 2019
Author(s)
Brian J. Nablo, Jungjoon Ahn, Kiran Bhadriraju, Jong M. Lee, Darwin Reyes-Hernandez
We present the quantification of cell viability during neutral red (NR) uptake with a compact lens-free system utilizing two light sources. Conventionally, the NR uptake assay determines cell viability based on the accumulation of NR within lysosomes and

Revisiting the Photon-Drag Effect in Metal Films

August 2, 2019
Author(s)
Jared H. Strait, Glenn E. Holland, Wenqi Zhu, Cheng Zhang, Bojan R. Ilic, Amit K. Agrawal, Domenico Pacifici, Henri J. Lezec
The photon-drag effect, the rectified current in a medium induced by conservation of momentum of absorbed or redirected light, is a unique probe of the detailed mechanisms underlying radiation pressure. We revisit this effect in gold, a canonical Drude

Reconciling LED and Monochromator-based Measurements of Spectral Responsivity

August 1, 2019
Author(s)
John F. Roller, Behrang H. Hamadani
The irradiance spectral responsivity is an important measurement characteristic for a reference solar cell and has served as a primary reference cell calibration method for a growing number of national labs in recent years. This paper discusses the process

Design and performance study of actively holding-off GHz-gated InGaAs/InP SPADs

May 13, 2019
Author(s)
Alessandro Restelli, Joshua C. Bienfang, Alan L. Migdall
High-speed periodic gating of InGaAs/InP single-photon avalanche diodes (SPADs) has allowed these detectors to operate at count rates above $10^8$ per second with low-afterpulsing. However, a drawback of high-speed periodic gating is that bias gates are

UV LEDs Based on p-i-n Core-Shell AlGaN/GaN Nanowire Heterostructures Grown by N-polar Selective Area Epitaxy

March 20, 2019
Author(s)
Matthew Brubaker, Kristen Genter, Alexana Roshko, Paul T. Blanchard, Bryan T. Spann, Todd E. Harvey, Kris A. Bertness
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm with 5x higher intensities than similar GaN homojunction LEDs. The improved characteristics were
Was this page helpful?