Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 1 - 25 of 66

Experimental demonstration of a robust training method for strongly defective neuromorphic hardware

December 11, 2023
Author(s)
William Borders, Advait Madhavan, Matthew Daniels, Vasileia Georgiou, Martin Lueker-Boden, Tiffany Santos, Patrick Braganca, Mark Stiles, Jabez J. McClelland, Brian Hoskins
Neural networks are increasing in scale and sophistication, catalyzing the need for efficient hardware. An inevitability when transferring neural networks to hardware is that non-idealities impact performance. Hardware-aware training, where non-idealities

Harmonic dependence of thermal magnetic particle imaging

September 22, 2023
Author(s)
Thinh Bui, Mark-Alexander Henn, Weston L. Tew, Megan Catterton, Solomon I. Woods
Advances in instrumentation and tracer materials are still required to enable sensitive and accurate 3D temperature monitoring by magnetic particle imaging. We have developed a magnetic particle imaging instrument to observe temperature variations using

Symmetry-dependent ultrafast manipulation of nanoscale magnetic domains

December 23, 2022
Author(s)
Nanna Hagstrom, Rahul Jangid, F. N. U. Meera, Diego Turenne, Jeffrey Brock, Erik Lamb, Boyan Stoychev, Justine Schlappa, Natalia Gerasimova, Benjamin Van Kuiken, Rafael Gort, Laurent Mercadier, Loic Le Guyader, Andrey Samartsev, Andreas Scherz, Giuseppe Mercurio, Hermann Durr, Alexander Reid, Monika Arora, Hans Nembach, Justin Shaw, Emmanuelle Jal, Eric Fullerton, Mark Keller, Roopali Kukreja, Stefano Bonetti, Thomas J. Silva, Ezio Iacocca
Symmetry is a powerful concept in physics, but its applicability to far-from-equilibrium states is still being understood. Recent attention has focused on how far-from-equilibrium states lead to spontaneous symmetry breaking. Conversely, ultrafast optical

Perpendicular magnetic tunnel junctions with multi-interface free layer

December 15, 2021
Author(s)
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel Gopman, Weigang Wang
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel

The role of orientation in the MEL response of OLEDs

July 13, 2021
Author(s)
Sebastian Engmann, Emily Bittle, Lee J. Richter, Rawad Hallani, John Anthony, David J. Gundlach
Magneto electroluminescence (MEL) is emerging as a powerful tool for the study of spin dynamics in emitting devices. The shape of the MEL response is typically used to draw qualitative inference on the dominant process (singlet fission or triplet fusion)

Nonlinear losses in magnon transport due to four-magnon scattering

May 25, 2020
Author(s)
T. Hula, K. Schultheiss, A. Budzakov, L. Korber, M. Bejarano, L. Flacke, L. Liensberger, M. Weiler, Justin Shaw, Hans Nembach, J. Fassbender, H. Schultheiss
We report on the impact of nonlinear four-magnon scattering on magnon transport in microstructured Co 25Fe 75 waveguides with low magnetic damping. We determine the magnon propagation length with microfocused Brillouin light scattering over a broad range

Intrinsic spin currents in ferromagnets

June 24, 2019
Author(s)
Vivek P. Amin, Junwen Li, Mark D. Stiles, Paul M. Haney
First principles calculations show that electric fields applied to ferromagnets generate spin currents flowing perpendicularly to the electric field. Reduced symmetry in these ferromagnets enables a wide variety of such spin currents. However, the total

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

January 4, 2019
Author(s)
Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach
Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

June 18, 2018
Author(s)
Wonil Chung, Mengwei Si, Pragya Shrestha, Jason Campbell, Kin P. Cheung, Peide Ye
In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi

Anomalous Supercurrent Modulation in Josephson Junctions With Ni-Based Barriers

May 15, 2018
Author(s)
Burm Baek, Michael L. Schneider, Matthew R. Pufall, William H. Rippard
We investigate the supercurrent transport characteristics of Ni-barrier Josephson junctions with various barrier multilayer structures. Our device fabrication and magneto-electrical measurement methods provide high enough statistics and rigor necessary for

Thermally driven anomalous Hall effect transitions in FeRh

April 30, 2018
Author(s)
Adrian Popescu, Pablo Rodrigues-Lopez, Paul M. Haney, Lilia M. Woods
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous Nernst response

Inductive detection of fieldlike and dampinglike ac inverse spin-orbit torques in ferromagnet/normal-metal bilayers

March 15, 2018
Author(s)
Andy Berger, Eric R. Edwards, Hans T. Nembach, Justin M. Shaw, Alexy D. Karenowska, Mathias Weiler, Thomas J. Silva
Phenomena that result from strong spin-orbit coupling (SOC) at ferromagnet/normal metal (FM/NM) interfaces hold great promise for the development of efficient and scalable spintronic devices. SOC drives non-equilibrium spin-charge conversion, manifest as

Optical spin transfer and spin-orbit torques in thin-film ferromagnets

August 30, 2017
Author(s)
Junwen Li, Paul M. Haney
We study the optically induced torques on thin film ferromagnetic layers under excitation by circularly polarized light. We include Rashba spin-orbit coupling and assume an out-of-plane magnetization, and consider incident light with an in-plane component

Spin-wave propagation in cubic anisotropy materials

June 30, 2017
Author(s)
Koji Sekiguchi, Seo-Won Lee, Hiroaki Sukegawa, Nana Sato, Se-Hyeok Oh, Robert McMichael, Kyung-Jin Lee
The information carrier of modern technologies is the electron charge whose transport inevitably generates Joule heating. Spin-wave, the collective precessional motion of electron spins, does not involve moving charges and thus alleviates Joule heating [1

A Perspective on Nonvolatile Magnetic Memory Technology

December 21, 2016
Author(s)
Ronald B. Goldfarb
Magnetic random-access memory (MRAM) is characterized by nonvolatility, low energy dissipation, high endurance (repeated writing), scalability to smaller dimensions, compatibility with complementary metal-oxide semiconductor (CMOS) processing, resistance

Circular Photogalvanic Effect in Organometal Halide Perovskite CH3NH3PbI3

November 7, 2016
Author(s)
Junwen Li, Paul M. Haney
We study the circular photogalvanic effect in the organometal halide perovskite solar cell absorber CH$_3$NH$_3$PbI$_3$. The calculated photocurrent density is about $10^{-9}$ A/W, comparable to the previously studied quantum well and bulk Rashba systems
Was this page helpful?