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Electronics

Magnetoelectronics

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Displaying 26 - 50 of 129

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

June 18, 2018
Author(s)
Wonil Chung, Mengwei Si, Pragya Shrestha, Jason Campbell, Kin P. Cheung, Peide Ye
In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi

Anomalous Supercurrent Modulation in Josephson Junctions With Ni-Based Barriers

May 15, 2018
Author(s)
Burm Baek, Michael L. Schneider, Matthew R. Pufall, William H. Rippard
We investigate the supercurrent transport characteristics of Ni-barrier Josephson junctions with various barrier multilayer structures. Our device fabrication and magneto-electrical measurement methods provide high enough statistics and rigor necessary for

Thermally driven anomalous Hall effect transitions in FeRh

April 30, 2018
Author(s)
Adrian Popescu, Pablo Rodrigues-Lopez, Paul M. Haney, Lilia M. Woods
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous Nernst response

Inductive detection of fieldlike and dampinglike ac inverse spin-orbit torques in ferromagnet/normal-metal bilayers

March 15, 2018
Author(s)
Andy Berger, Eric R. Edwards, Hans T. Nembach, Justin M. Shaw, Alexy D. Karenowska, Mathias Weiler, Thomas J. Silva
Phenomena that result from strong spin-orbit coupling (SOC) at ferromagnet/normal metal (FM/NM) interfaces hold great promise for the development of efficient and scalable spintronic devices. SOC drives non-equilibrium spin-charge conversion, manifest as

Optical spin transfer and spin-orbit torques in thin-film ferromagnets

August 30, 2017
Author(s)
Junwen Li, Paul M. Haney
We study the optically induced torques on thin film ferromagnetic layers under excitation by circularly polarized light. We include Rashba spin-orbit coupling and assume an out-of-plane magnetization, and consider incident light with an in-plane component

Spin-wave propagation in cubic anisotropy materials

June 30, 2017
Author(s)
Koji Sekiguchi, Seo-Won Lee, Hiroaki Sukegawa, Nana Sato, Se-Hyeok Oh, Robert McMichael, Kyung-Jin Lee
The information carrier of modern technologies is the electron charge whose transport inevitably generates Joule heating. Spin-wave, the collective precessional motion of electron spins, does not involve moving charges and thus alleviates Joule heating [1

A Perspective on Nonvolatile Magnetic Memory Technology

December 21, 2016
Author(s)
Ronald B. Goldfarb
Magnetic random-access memory (MRAM) is characterized by nonvolatility, low energy dissipation, high endurance (repeated writing), scalability to smaller dimensions, compatibility with complementary metal-oxide semiconductor (CMOS) processing, resistance

Circular Photogalvanic Effect in Organometal Halide Perovskite CH3NH3PbI3

November 7, 2016
Author(s)
Junwen Li, Paul M. Haney
We study the circular photogalvanic effect in the organometal halide perovskite solar cell absorber CH$_3$NH$_3$PbI$_3$. The calculated photocurrent density is about $10^{-9}$ A/W, comparable to the previously studied quantum well and bulk Rashba systems

Higher order perpendicular magnetic anisotropy in ultra-thin Co60Fe20B20 layers and the observation of an easy cone state.

June 1, 2015
Author(s)
Justin M. Shaw, Hans T. Nembach, Mathias A. Weiler, Martin A. Schoen, Thomas J. Silva, Jonathan Z. Sun, Daniel C. Worledge
We used broadband ferromagnetic resonance (FMR) spectroscopy to measure the second and forth order perpendicular magnetic anisotropies in Ta/ Co60Fe20B20/MgO layers over a thickness range of 0.8-5 nm. For a thickness greater than 1.0 nm, the easy axis is
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