Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

A Perspective on Nonvolatile Magnetic Memory Technology

Published

Author(s)

Ronald B. Goldfarb

Abstract

Magnetic random-access memory (MRAM) is characterized by nonvolatility, low energy dissipation, high endurance (repeated writing), scalability to smaller dimensions, compatibility with complementary metal-oxide semiconductor (CMOS) processing, resistance to radiation damage, and short read and write times. The most intriguing of these, nonvolatility and low energy dissipation, are the main drivers of the technology. Recent accelerated growth in data centers and their demand for energy are bringing the need for new computer logic and memory to a head. There is a need to prototype, test, and benchmark the energy dissipation, high speed performance, reliability, dimensional scalability, temperature margins, and fabrication reproducibility of MRAM materials, devices, and circuits.
Citation
Introduction to Magnetic Random-Access Memory
Volume
ISBN: 978-1-119-00974-0
Publisher Info
Institute of Electrical and Electronics Engineers and John Wiley, Piscataway and Hoboken, NJ

Keywords

Computer memory, magnetic random-access memory, spin electronics, spintronics, spin torque

Citation

Goldfarb, R. (2016), A Perspective on Nonvolatile Magnetic Memory Technology, Institute of Electrical and Electronics Engineers and John Wiley, Piscataway and Hoboken, NJ, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=920736 (Accessed May 27, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 21, 2016, Updated February 19, 2017