Goldfarb, R.
(2016),
A Perspective on Nonvolatile Magnetic Memory Technology, Institute of Electrical and Electronics Engineers and John Wiley, Piscataway and Hoboken, NJ, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=920736
(Accessed October 10, 2024)
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A Perspective on Nonvolatile Magnetic Memory Technology
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Author(s)
Abstract
Magnetic random-access memory (MRAM) is characterized by nonvolatility, low energy dissipation, high endurance (repeated writing), scalability to smaller dimensions, compatibility with complementary metal-oxide semiconductor (CMOS) processing, resistance to radiation damage, and short read and write times. The most intriguing of these, nonvolatility and low energy dissipation, are the main drivers of the technology. Recent accelerated growth in data centers and their demand for energy are bringing the need for new computer logic and memory to a head. There is a need to prototype, test, and benchmark the energy dissipation, high speed performance, reliability, dimensional scalability, temperature margins, and fabrication reproducibility of MRAM materials, devices, and circuits.Citation
Introduction to Magnetic Random-Access Memory
Volume
ISBN: 978-1-119-00974-0
Publisher Info
Institute of Electrical and Electronics Engineers and John Wiley, Piscataway and Hoboken, NJ
Pub Type
Books
Download Paper
Keywords
Computer memory, magnetic random-access memory, spin electronics, spintronics, spin torque
Citation
Issues
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Created December 21, 2016, Updated February 19, 2017