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Chemistry

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Displaying 1026 - 1050 of 1934

Progress in the Development of Combustion Databases for Liquid Fuels

January 21, 2004
Author(s)
Wing Tsang
This paper describes the present situation regarding chemical kinetic databases for the simulation of the combustion of liquid fuels. Past work in the area is summarized. Much is known about the, reactions of the smaller fragments from combustion process

Comparative Thickness Measurements of SiO 2 /Si Films for Thickness Less than 10 nm

January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were

Improving the Sensitivity of Electron Beam Microanalytical Techniques by Enhanced X-Ray Spectrometry: X-Ray Microcalorimetry, Silicon Drift Detector Energy Dispersive X-ray Spectrometry, and Polycapillary X-ray Optics

December 25, 2003
Author(s)
Dale E. Newbury
The microcalorimeter energy dispersive x-ray spectrometer, the silicon drift detector (SDD), and polycapillary x-ray optics are recent developments that have significantly advanced analytical x-ray spectrometry for electron beam instruments. The

Selective DNA Sensing Elements Integrated Into Microfluidic Channels

December 1, 2003
Author(s)
Rebecca A. Zangmeister, Michael J. Tarlov
This paper describes the development of a unique fluorescence based DNA diagnostic assay that does not require pre-labeling of the target oligomer prior to analysis. The assay uses polyacrylamide hydrogel plugs immobilized in microfluidic channels, and is

Bevel Depth Profiling SIMS for Analysis of Layer Structures

September 1, 2003
Author(s)
John G. Gillen, Scott A. Wight, P Chi, Albert J. Fahey, Jennifer R. Verkouteren, Eric S. Windsor, D. B. Fenner
We are evaluating the use of bevel depth profiling Secondary Ion Mass Spectrometry (SIMS) for the characterization of layered semiconductor materials. In this procedure, a sub-degree angle bevel is cut into the analytical sample with an oxygen or cesium
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