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Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh
Velocity fields for Poiseuille flow through tubes having general cross section are calculated using a path integral method involving the first‐passage times of
In his recent paper, Frickey presents formulas for conversions between various network matrices. Four of these matrices (Z, Y, h, and ABCD) relate voltages and