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Journals

Determining the physical properties of molecules with nanometer-scale pores

Author(s)
Haiyan Wang, Jessica Ettedgui, Jacob Fortater, Joseph W. Robertson, Joseph Reiner, Huisheng Zhang, Siping Chen, John J. Kasianowicz
Nanometer-scale pores have recently been developed for the detection, characterization, and quantitation of a wide range of analytes (e.g., ions, polymers

p-type doping efficiency in CdTe: Influence of second phase formation

Author(s)
Jedidiah J. McCoy, Santosh K. Swain, David R. Diercks, Brian Gorman, Kelvin G. Lynn, John R. Sieber
Cadmium Telluride (CdTe) high purity, bulk crystals doped with phosphorus have been grown via vertical Bridgman melt growth technique to understand and improve

Ultralow power artificial synapses using nanotextured magnetic Josephson junctions

Author(s)
Michael L. Schneider, Christine A. Donnelly, Stephen E. Russek, Burm Baek, Matthew R. Pufall, Peter F. Hopkins, Paul D. Dresselhaus, Samuel P. Benz, William H. Rippard
Neuromorphic computing is a promising avenue to dramatically improve the efficiency of certain computational tasks, such as perception and decision making

Multi-Robot Assembly Strategies and Metrics

Author(s)
Jeremy A. Marvel, Roger V. Bostelman, Joseph A. Falco
We present a survey of multi-robot assembly applications and methods, and describe trends and general insights into the multi-robot assembly problem for

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the

Band offset and electron affinity of MBE-grown SnSe2

Author(s)
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its

Methods for Quantitative Infrared Directional-Hemispherical and Diffuse Reflectance Measurements Using a Fourier Transform Spectrometer and a Commercial Integrating Sphere

Author(s)
Leonard M. Hanssen, Thomas A. Blake, TImothy J. Johnson, Russell G. Tonkyn, Brenda M. Forland, Tanya L. Myers, Carolyn S. Brauer, Yin-Fong Su, Bruce E. Bernacki
Infrared integrating sphere measurements of solid samples are important in providing reference data for contact, standoff and remote sensing applications. At

Recommendations for assessing commutability part 3: based on the calibration effectiveness of a reference material

Author(s)
Johanna Camara, Weykamp Cas, Goran Nilsson, Robert Rej, Finlay MacKenzie, Ferruccio Ceriotti, Neil Greenberg, Schimmel Heinz, Gerhard Schumann, Thomas Keller, Vincent Delatour, Mauro Panteghini, Chris Burns, W. Greg Miller
A process is described to assess the commutability of a reference material intended for use as a calibrator based on its ability to fulfill its intended use in
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