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Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: the role of nanofabrication

Published

Author(s)

Jin Liu, Kumarasiri Konthasinghe, Marcelo I. Davanco, John R. Lawall, Vikas Anant, Varun B. Verma, Richard P. Mirin, Jin Dong Song, Ben Ma, Ze Sheng Chen, Hai Qiao Ni, Zhi Chuan Niu, Kartik A. Srinivasan

Abstract

Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been demonstrated. In such applications, nanofabrication is used to create structures in which the quantum dot preferentially interacts with strongly-confined optical modes. An open question is the extent to which such nanofabrication may also have an adverse influence, through the creation of traps and surface states that could induce blinking, spectral diffusion, and dephasing. Here, we use photoluminescence imaging to locate the positions of single InAs/GaAs quantum dots with respect to alignment marks with
Citation
Physical Review Applied
Volume
9
Issue
6
Created June 13, 2018, Updated November 10, 2018