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Journals

Universal RNA Reference Materials for Gene Expression

Author(s)
M Cronin, K Ghosh, F Sistare, J Quackenbush, V L. Vilker, C D. O'Connell
A NIST sponsored workshop entitled Metrology and Standards Needs for Gene Expression Technologies: Universal RNA Standards was held on March 28-29, 2003 to...

Amino Acid Exchangeability from Experimental Data

Author(s)
L Y. Yampolsky, Arlin Stoltzfus
Amino acid sequence differences between proteins are often interpreted by reference to a pairwise measure of amino acid similarity, based either on observed...

The Microwave Spectrum and Ground State Structure of H2O-HI

Author(s)
A McIntosh, T Walther, R R. Lucchese, J W. Bevan, R D. Suenram, A C. Legon
The microwave spectrum and ground state structure of H^ 2O HI are reported. The fitted ground state constants include: A 0=428.9 GHz, B 0=2189.7351(10) MHz, C 0...

Immunomodulatory Effects of Macrolide Antibiotics in Sulfur Mustard Exposed Airway Epithelial Cells: Quantum Dots-Mediated Immunocytochemical Analysis of iNOS and Diaminofluorescein-Mediated Flow Cytometric Analysis of Intracellular Nitric Oxide

Author(s)
X P. Gao, Radharaman Ray, Yan Xiao, Peter E. Barker, Prabhati Ray
Exposure of airway epithelial cells to 100 uM sulfur mustard significantly upregulated induced nitric oxide (iNOS) in cells. This response, quantitated by both...

Structure and Reactivity of the Hydrated Hematite (0001) Surface

Author(s)
T P. Trainor, Anne M. Chaka, P J. Eng, M Newville, G A. Waychunas, J G. Catalano, G E. Brown
Hematite (alpha-Fe 2 O 3 ) is significantly more reactive to water and metal ions than its isostructure corundum (alpha-Al 2 O 3u) under environmental...

A Predictive Formula for the Electron Stopping Power

Author(s)
Aleksander Jablonski, S Tanuma, Cedric J. Powell
We describe the development of a new analytical formula for the electron stopping power (SP) for electron energies between 200 eV and 30 keV. This formula...

Arsenic and Antimony Implantations in SiC

Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion...
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