FCMN Confirmed Posters

The following posters are scheduled to be presented at the 2015 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics. This list is subject to change.

1. Optical Constants of Ni_1-xPt_x and Ni_1-xPt_xSi for In-LineContact Metrology
   Lina S. Abdallah^1,*, StefanZollner¹, Mark Raymond², Ahmet S. Ozcan³, andChristian Lavoie^{4
   1}Department of Physics, New Mexico State University, MSC 3D, LasCruces, NM, USA
   ²GLOBALFOUNDRIES, Albany, NY, USA
   ³IBM, 850 rue Jean Monnet, 38926 Crolles, France
   ⁴IBM Research Division, Yorktown Heights, NY, USA
   ^*Now at: Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR, 97124, USA

2. Metallic Contamination Analysis of 450 mm Wafers Using VPD-DC-ICPMS and LPD-ICPMS
   C. Agraffeil¹, H. Fontaine¹,T. Lardin¹, V. Enyedi¹, D. Noventa¹, B.Charlet¹, G. Delpu², and T. Brillouet^{2
   1}Univ. Grenoble Alpes, F-38000 Grenoble, France - CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
   ²RECIF Technologies, 9 Rue des briquetiers, 31703 Blagnac, France

3. Positon Annihilation Spectroscopy: an Emerging Technique for Characterization of Oxygen Vacancies in Hf-based-high-k Materials?
   M. Alemany^{1,4, 3}, P.Desgardin⁴, A. Chabli², F. Bertin³, M.Gros-Jean¹, M.-F. Barthe^{4
   1}STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
   ²Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France, CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France
   ³Univ. Grenoble Alpes, F-38000 Grenoble, France, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
   ⁴CNRS, CEMHTI UPR3079, Univ. Orléans, F-45071 Orléans, France

4. Further Development of Electron Tomography
   M. Birke, D. Utess, E. Langer, and H.-J. Engelmann
   GLOBALFOUNDRIES Module One LLC & Co. KG, Center for Complex Analysis, MS E23-MA, D-01109 Dresden, Germany

5. Development and Characterisation of Scatterometry Reference Standards
   Bernd Bodermann¹, Bernd Loechel², Frank Scholze¹, Johannes Endres¹, Juergen Probst², Matthias Wurm¹, Max Schoengen²,Michael Krumrey¹, Sven Burger³, and Victor Soltwisch^{1
   1}Physikalisch-Technische Bundesanstalt,Bundesallee 100, 38116 Braunschweig and Abbestraße 2-12, 10587 Berlin, Germany
   ²Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, D-12489 Berlin, Germany
   ³JCMwave GmbH, Bolivarallee 22, D-14050 Berlin, Germany

6. Nanostructure Imaging on Plasmonic Gratings by Epi-fluorescence Microscopy
   Biyan Chen¹, Sangho Bok¹, Samiullah Pathan¹, Suresh Dhananjay², Anandhi Upendran³,Raghuraman Kannan⁴, Cherian Mathai¹, Keshab Gangopadhyay^1,5, and Shubhra Gangopadhyay^{1
   1}Dept of Elec. and Comp. Eng., Univ. of Missouri, Columbia, MO, USA
   ²Department of Bioengineering, University of Missouri, Columbia, MO 65211, USA
   ³School of Medicine, University of Missouri, Columbia, MO 65211, USA
   ⁴Department of Radiology and Biological Engineering, University of Missouri, Columbia, MO 65211, USA
   ⁵Nanos Technologies LLC, 8650 Westlake Road, Columbia, MO 65202 USA

7. Quantifying Ellipsometric Precision for Multichannel Rotating-Element Spectroscopic Ellipsometers
   Yong Jai Cho, Won Chegal, Jeong PyoLee, and Hyun Mo Cho
   Division of Industrial Metrology, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Yuseong-gu, Deajeon 305-340, Republic of Korea

8. Sub-10nm-thick-carbon Nanotube Tip for AFM
   J. Choi^1,2, K. Y. Jung³, S. K. Kanth^1,4, B. C. Park¹, H. S. Kim⁴, and L. Joon^{2
   1}Korea Research Institute of Standards and Science, Daejeon 305-340, South Korea
   ²Chungnam National University, Daejeon 305-764, South Korea
   ³Nanofocus Inc., Seoul 152-050, South Korea
   ⁴Sunmoon University, Asan 336-708, South Korea

9. 300mm and 450mm Standard Calibration Wafers - A Standard Tool for Semiconductor Metrology Calibration and Matching
   Rand Cottle¹, Menachem Shoval², Yuval Agami², Frank Tolic³, Stephen Bennett³, and Martin Rodgers^{3
   1}Global 450mm Consortium, CNSE at SUNY Polytechnic Institute, Albany, NY²
   Metro450 Consortium, Office of Chief Science, MAGNET program, TelAviv, Israel
   ³CNSE, Colleges of Nanoscale Science and Engineering at SUNY Polytechnic Institute, Albany NY

10. Non-Destructive Compositional Metrology of NAND Memory and Emerging Non-Volatile Memories
    Olivier Dulac, Anna Meura, Anne-Sophie Robbes, Mona Moret and David J. Larson
    CAMECA, 29 quai des Grésillons, 92 622 Gennevilliers, France

11. Breakthrough of STEM and FIB Automation in Critical Dimension Metrology of Wafer Manufacturing
    Jianxin Fang, Wei Hong, Jose Garjado, Juanita Castillo, Zhipeng Li, and Haifeng Wang
    Western Digital Corporation, 44100 Osgood Road, Fremont, CA 94539, USA
12. Electron Energy-LossSpectroscopy (EELS) Analysis on MoS₂ Layers Transferred on Silicon
    Karine Florent¹, David MacMahon², Andrea Brothers², and Santosh Kurinec^{1
    1}Microelectronic Engineering, Rochester Institute of Technology, Rochester NY, USA
    ²Micron Technology Inc., Manassas, VA, USA

13. Characterization of Near- to Far-Field Transformers by Interferometric Fourier-Scatterometry
    K. Frenner, V. Ferreras-Paz, and W.Osten
    Institut für Technische Optik (ITO), Universität Stuttgart, Pfaffenwaldring 9, D-70569 Stuttgart

14. Transmitted Small Angle X-Ray Scattering Intensity Enhancement with a Designed Grating
    Wei-En Fu, Yen-Song Chen, Yun-SanChien, and Wen-Li Wu
    Center for Measurement Standards, Industrial Technology Research Institute,321 KuangFu Rd Sect 2, Hsinchu, Taiwan, ROC

15. Potential of the EsB Detector in the Low Voltage Scanning Electron Microscopy (LVSEM): Application in Microelectronics
    Aránzazu Garitagoitia Cid^1,2, Rüdiger Rosenkranz¹, Martin Gall¹, and Ehrenfried Zschech^{1,2
    1}Fraunhofer Institute for Ceramic Technologies and Systems -Materials Diagnostics (IKTS-MD), Maria-Reiche-Str. 2, 01109 Dresden, Germany
    ²Dresden Center for Nanoanalysis (DCN), TU Dresden, 01062 Dresden, Germany

16. Correlative Atom Probe and STEM-HAADF Tomography of Nanodevices
    A.Grenier¹, S.Duguay², R.Serra¹, J.P. Barnes¹, G Audoit¹, D Cooper¹, D. Blavette², N. Rolland², and F. Vurpillot^{2
    1}Univ. Grenoble Alpes, F-38000 Grenoble, France, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
    ²Groupe de Physique des Matériaux, UMR 6634 CNRS —Université deRouen, BP 12, 76801 Saint Etienne du Rouvray Cedex, France

17. Electron Tomography of Advanced Transistor Architectures
    Andrew A. Herzing¹ and Jiong Zhang^{2
    1}Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA
    ²Intel Corp., 2501 NW 229th Ave, Hillsboro, OR, 97124 USA

18. Reference-free, Depth-dependent Characterization of Nanoscaled Materials Using a Combined Grazing Incidence X-ray Fluorescence and X-ray Reflectometry Approach
    Philipp Hönicke¹, BlankaDetlefs², Claudia Fleischmann³, Matthias Müller¹, Emmanuel Nolot², Helen Grampeix², and Burkhard Beckhoff^{1
    1}Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12,10587 Berlin, Germany
    ²CEA-LETI, 17 rue des Martyrs, 38054 Grenoble, France
    ³imec, Kapeldreef 75, BE-3001 Leuven, Belgium

19. Extreme Ultraviolet Nanometrology for Imaging of New Dynamics in NanoSystems
    Kathleen Hoogeboom-Pot¹, Jorge Hernandez-Charpak¹, Dennis Gardner¹, MatthewSeaberg¹, Bosheng Zhang¹, Travis Frazer¹, Elisabeth Shanblatt¹, Christina Porter¹, Robert Karl¹, Erik Anderson², Weilun Chao², Justin Shaw³, Margaret Murnane¹, Henry Kapteyn¹, Daniel Adams¹, and Damiano Nardi^{1
    1}JILA, 440 UCB, University of Colorado, Boulder CO 80309
    ²Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
    ³Electromagnetics Division, NIST, Boulder, CO 80305

20. Simulation of Ga Ion Induced Amorphization in Si During FIB Using TRIDYN Simulation
    Jin Huang¹, Markus Loeffler¹, Wolfhard Moeller² and Ehrenfried Zschech^{1,3
    1}Technische Universität Dresden, Dresden Center for Nanoanalysis (DCN), Helmholtzstrasse 18, 01187 Dresden, Germany
    ²Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
    ³Fraunhofer Institute for Ceramic Technologies and Systems (IKTS), Maria-Reiche-Strasse 2, 01109 Dresden, Germany

21. Characterization of Cross-Sectional Profile of Resist Pattern Using Grazing-Incidence Small Angle X-Ray Scattering
    Yoshiyasu Ito, Akifusa Higuchi, and Kazuhiko Omote
    Rigaku Corporation, 3-9-12 Matsubara-cho, Akishima, Tokyo, Japan 190-8666

22. Metamorphic Growth-Related Defects and Electrical Properties in III-Sb Materials for High-Mobility p-MOSFETs
    A. P. Jacob¹, S. Madisetti²,S. Sasaki², V. Tokranov², M. Yakimov², M.Hirayama², S. Bentley¹, and S. Oktyabrsky^{2
    1}GLOBALFOUNDRIES at Albany NanoTech, Albany, NY 12203, USA
    ²SUNY College of Nanoscale Science and Engineering, Albany NY 12203,USA

23. Analysis of Defects in SiGe and Ge
    Abhijeet Joshi and James Ewan
    Active Layer Parameterics, Inc., Los Angeles, CA 90024

24. In-Situ Real-Time Monitoring and Control of Kinetic Processes in Atomic Layer Depositions By Spectroscopic Ellipsometry with 1.25 Hz Sampling Rate
    Marcel Junige¹, Varun Sharma¹, Ralf Tanner¹, DanielSchmidt², Greg Pribil³, Matthias Albert¹,Mathias Schubert², and Johann W. Bartha^{1
    1}Technische Universität Dresden, Institute of Semiconductors and Microsystems, 01062 Dresden, Germany
    ²Singapore Synchrotron Light Source, National University of Singapore, Singapore 117603, Singapore
    ³J. A. Woollam Co. Inc., 645 M Street, Suite 102, Lincoln, Nebraska68508-2243, USA
    ⁴Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA

25. Characterization of Plasma Process Induced Damage Near SiN/SiO₂/Si Interface By Room Temperature Photoluminescence
    Jung Geun Kim¹, Ho Jin Cho¹,Sung Ki Park¹, Seok-Hee Lee¹, Byoung Gon Choi²,Jea Young An², Young Il Cheon², Young Ho Jeon²,Toshikazu Ishigaki³, Kitaek Kang³, and Woo Sik Yoo^{3
    1}SK hynix, Icheon, Gyeonggi-do, 467-701, Korea
    ²SK hynix, Cheongju, Chungcheongbuk-do, 361-480, Korea
    ³WaferMasters, Inc., San Jose, California, 95112, USA

26. Application of Raman Spectroscopy for Local Stress Methodology and Characterization of Amorphous Carbon and SiGe Films in Semiconductor Process Development
    Jae Hyun Kim^1,2, Chang Hwan Lee², Koon Ho Bae², and Seung Min Han^{1
    1}Graduate School of EEWS, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
    ²SK Hynix, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, South Korea

27. Positron Annihilation Lifetime Spectroscopy (PALS) on Advanced, Self-assembled Porous Organosilicate Glasses
    M. Kraatz¹, A. Clausner¹,M. Gall¹, E. Zschech¹, M. Butterling², W.Anwand³, A. Wagner³, R. Krause-Rehberg², and K. Pakbaz^{4
    1}Fraunhofer Institute for Ceramic Technologies and Systems –Materials Diagnostics, Maria-Reiche-Str. 2, 01109 Dresden, Germany
    ²Department of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3, 06120 Halle Germany
    ³Institute of Radiation Physics, Helmholtz-Zentrum, Dresden-Rossendorf, P.O. Box 510119, 01314, Dresden, Germany
    ⁴SBA Materials, Inc., Albuquerque, 9430-H San Mateo Blvd. NE, New Mexico 87113, USA

28. Terahertz Time-Domain Spectroscopy for Characterization of Doping Profiles in Semiconductors
    Santosh Kurinec¹, Chih Yu Jen¹,Gaurav Tulsyan², and Christiaan Richer^{3
    1}Microsystems Engineering, Rochester Institute of Technology,Rochester, NY 14623, USA
    ²Materials Science & Engineering, Rochester Institute ofTechnology, Rochester, NY 14623, USA
    ³Department of Chemical Engineering, Rochester Institute ofTechnology, Rochester, NY 14623, USA

29. Real-Time Monitoring of Thin-Films Using Temperature-Controlled Ellipsometry for Nanotechnology Applications
    C. Licitra, F. Piegas Luce, F. Mazen,P. Noé, J. El-Sabahy, V. Jousseaume, E. Beche, and L. Vignoud
    Univ. Grenoble Alpes, F-38000 Grenoble, France
    CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

30. Analysis of Surfaces for Immobilization of Biomolecules Using Soft X-Ray Spectrometry
    A. Nutsch¹, C. Streeck¹,J. Weser¹, B. Beckhoff¹, D. Grötzsch², W.Malzer², P. Dietrich³, T. Fischer³, C.Nietzold³, K. Rurack³, and W. Unger^{3
    1}Physikalisch-Technische Bundesanstalt (PTB), Abbe Strasse 2-12,10587 Berlin, Germany
    ²Technische Universität Berlin, Hardenbergstr. 3610623 Berlin,Germany
    ³Bundesanstalt für Materialforschung und –prüfung (BAM), Unter denEichen 87, 12205 Berlin, Germany

31. Application of Helium Ion Microscopy to Direct Nano-patterning of Graphene
    Shinichi Ogawa and Yuichi Naito
    Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) West 7A, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569 Japan

32. Sensitive Nanomaterials Detection and Analysis in Solution
    Janahan Ramanan¹, Basil G.Eleftheriades¹, Bhagrava Ravoori², Marie Tripp²,Tuyen K. Tran², and Amr S. Helmy^{1
    1}Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3G4, Canada
    ²Intel Corporation, Hillsboro, OR, USA

33. In-Die High Resolution Nanotopography Data, Impact in the CMP Process Monitoring for Advanced Nodes
    N. Ruiz¹, F.Dettoni²,M. Rivoire^1,2, V.Balan¹, and C. Beitia^{1
    1}Univ.Grenoble Alpes, F-38000 Grenoble France, CEA, LETI,MINATEC Campus, F-38054 Grenoble, France
    ²STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

34. High Resolution X-ray Diffraction for in-line Monitoring of Ge MOSFET Devices
    Paul Ryan¹, MatthewWormington², Jianwu Sun^3,4, Andriy Hikavyy³,Yosuke Shimura^3,5,6, Liesbeth Witters³, Hilde Tielens³,and Roger Loo^{3
    1}Jordan Valley Semiconductors UK Ltd, Belmont Business Park, Belmont Durham, DH1 1TW, UK
    ²Jordan Valley Semiconductors Inc., 3913 Todd Lane, Suite 106,Austin, TX 78744, USA
    ³IMEC, Kapeldreef 75, B – 3001 Leuven, Belgium
    ⁴Currently at the Department of Physics, Chemistry and Biology(IFM), Linköping University, Linköping 58183, Sweden
    ⁵Instituut voor Kern- en Stralingsfysica, KU Leuven, 3001 Leuven, Belgium
    ⁶FWO Pegasus Marie Curie Fellow

35. Advanced Metrology for Beyond Silicon Semiconductor Device Structures
    Andreas Schulze¹, RogerLoo¹, Johan Meersschaut¹, Dennis van Dorp¹,David Gachet², Jean Berney², Wilfried Vandervorst^1,3,and Matty Caymax^{1
    1}imec, Kapeldreef 75, 3001 Leuven, Belgium
    ²Attolight AG, EPFL Innovation Park Building D, 1015 Lausanne, Switzerland
    ³KU Leuven, Dept. of Physics and Astronomy, Celestijnenlaan 200D,3001 Leuven, Belgium

36. Advanced Broadband Optical Inspection on Complex Logic Structures Using NanoPoint at 28nm Design Nodes
    Robert Teagle¹, HoangNguyen¹, Ralf Buengener¹, Peter Lin¹, AnkitJain², Sumanth Kini², Rahul Lakhawat², and RaviSanapala^{2
    1}GLOBALFOUNDRIES, 400 StoneBreak Road Extension, Malta, NY 12020
    ²KLA-Tencor, 2 Bayberry Drive, Malta, NY 12020

37. Conductive Diamond Probes for Advanced Atomic Force Microscopy
    V. Usov^1,2,3, N. O'Hara^2,3,Z. Xiapu^1,2, D. Scanlan^2,3, A. Potie^1,2,J. Boland^1,2, and G.L.W. Cross^{1,2,3
    1}School of Physics, Trinity College, Dublin 2, Ireland
    ²Advanced Materials and BioEngineering Research Centre (AMBER),Trinity College, Dublin 2, Ireland
    ³Adama Innovations Ltd., CRANN, Trinity College Dublin, Dublin 2.Ireland
38. Three-Dimensional SEM Metrology for Nanoelectronics
    András E. Vladár and John S. Villarrubia
    National Institute of Standards and Technology, Semiconductor and Dimensional Metrology Division, Physical Measurements Laboratory, Gaithersburg, MD 20899 USA

39. Grazing Incidence X-ray Fluorescence (GI-XRF) for Thin Film and Ultra-thin Film Thickness Metrology
    Charles C Wang, Nimoal Sun, Jiang Lu, Weifeng Ye, Chi Ching, and Yuri Uritsky
    Applied Materials, Inc., M/S 0203, 3100 Bowers Ave, Santa Clara, CA 95054

40. Robust Optical Modeling of SiGe Layers
    Martin Weisheit¹, Robert Melzer¹, Henry Bernhardt¹,and Adam Urbanowicz^{2
    1}GLOBALFOUNDRIES Module 1 LLC & Co. KG, Wilschdorfer Landstraße 101, D-01109 Dresden
    ²now at Nova Measuring Instruments

41. Effects of Image Processing on Electron Diffraction Patterns Used for Nanobeam Diffraction Strain Measurements
    Mark Williamson¹, Piet vanDooren¹, and John Flanagan^{2
    1}FEI Company, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands
    ²FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124

42. Measurement Range Induced Electron Density Perturbations in X-Ray Reflectometry
    Donald Windover
    Materials Measurement Science Division, Materials Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA

43. 2D and 3D Nanoscale Measurements of Electric and Magnetic Fields in Functional Materials with Electron Holography
    Daniel Wolf, Felix Börrnert, JonasKrehl, Andreas Lenk, Hannes Lichte, Axel Lubk, Falk Röder, Jan Sickmann, Sebastian Sturm, and Karin Vogel
    Triebenberg Laboratory, Institute of Structure Physics, Technische Universität Dresden, 01062 Dresden, Germany

44. Barrier Modification of Metal-contact on Silicon by Sub-2 nm Platinum Nanoparticle
    H. Zheng¹, S.C. Su¹,S. Mukherjee¹, K. Gangopadhyay^1,2, and S. Gangopadhyay^{1
    1}Department of Electrical and Computer Engineering, University of Missouri Columbia, Missouri 65201, U.S.A.
    ²Nanos Technologies LLC, Columbia, Missouri 65203