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Curt A. Richter (Fed)

Dr. Curt A. Richter is an experimental physicist in the Alternative Computing Group of the Nanoscale Device Characterization Division, Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He currently leads the Quantum Transport Project, where he conducts basic research to develop the measurement science needed for innovation in future nanoelectronics for quantum and classical information processing. Richter has worked at NIST, Gaithersburg, MD since 1993.

Dr. Richter received the M.S., M.Phil., and Ph.D. degrees in Applied Physics from Yale University after receiving a B.S. in Physics from The College of William and Mary. After graduating from Yale, Dr. Richter joined NIST directly. Technically, he currently focuses on extracting critical properties of future nanoelectronic devices for use in high performance computing systems. During Richter's tenure at NIST he has strongly engaged with the semiconductor industry through direct collaborations and through joint planning and oversight activities at the Semiconductor Research Council (SRC). Richter is an author of more than 175 technical articles and editor of one book.

Richter has engaged in many leadership and service roles at Conferences, Professional Societies, in public/private consortia, and within the Federal service, for example: Vice Chair and Member at Large on the American Physical Society Forum on Industrial and Applied  Physics (FIAP) Executive Committee, American Institute of Physics (AIP) Prize Selection Committee, Member of the Technical Program Committee of the Device Research Conference (DRC) and the Electronic Materials Conference (EMC), Chairman of the International Semiconductor Device Research Symposium (ISDRS), Nanoelectronic Computing Research (nCORE) Science Advisory Board (SAB) member, and Nanoelectronics Research Initiative (NRI) Technical Program Group (TPG) member.

A list of many of his publications can be found online.



How to Report and Benchmark Emerging Field-Effect Transistors

Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and

High-performance dual-gate graphene pH sensors

Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of

Are 2D Interfaces Really Flat?

Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the

Patents (2018-Present)


NIST Inventors
Arvind Balijepalli and Curt A. Richter
patent description (1) Disclosed is a charge detector to operate a dual-gated field effect transistor at a quantum capacitance limit for performing ultrasensitive biosensing, the charge detector comprising: a charge sensor that senses a charged analyte and produces a charge signal in response to
Created July 30, 2019, Updated December 8, 2022