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Curt A. Richter

Dr. Curt A. Richter is an experimental physicist in the Alternative Computing Group of the Nanoscale Device Characterization Division, Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He currently leads the Quantum Transport Project, where he conducts basic research to develop the measurement science needed for innovation in future nanoelectronics for quantum and classical information processing. Richter has worked at NIST, Gaithersburg, MD since 1993.

Dr. Richter received the M.S., M.Phil., and Ph.D. degrees in Applied Physics from Yale University after receiving a B.S. in Physics from The College of William and Mary. After graduating from Yale, Dr. Richter joined NIST directly. Technically, he currently focuses on extracting critical properties of future nanoelectronic devices for use in high performance computing systems. During Richter's tenure at NIST he has strongly engaged with the semiconductor industry through direct collaborations and through joint planning and oversight activities at the Semiconductor Research Council (SRC). Richter is an author of more than 175 technical articles and editor of one book.

Richter has engaged in many leadership and service roles at Conferences, Professional Societies, in public/private consortia, and within the Federal service, for example: Vice Chair and Member at Large on the American Physical Society Forum on Industrial and Applied  Physics (FIAP) Executive Committee, American Institute of Physics (AIP) Prize Selection Committee, Member of the Technical Program Committee of the Device Research Conference (DRC) and the Electronic Materials Conference (EMC), Chairman of the International Semiconductor Device Research Symposium (ISDRS), Nanoelectronic Computing Research (nCORE) Science Advisory Board (SAB) member, and Nanoelectronics Research Initiative (NRI) Technical Program Group (TPG) member.

A list of many of his publications can be found online.



Electron-electron interactions in low-dimensional Si:P delta layers

Joseph A. Hagmann, Xiqiao Wang, Ranjit V. Kashid, Pradeep N. Namboodiri, Jonathan E. Wyrick, Scott W. Schmucker, Michael D. Stewart, Richard M. Silver, Curt A. Richter
Key to producing quantum computing devices based on the atomistic placement of dopants in silicon by scanning tunneling microscope (STM) lithography is the

Nonvolatile memory based on redox-active Ruthenium molecular monolayers

Kai Jiang, Sujitra J. Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click’ reaction for
Created July 30, 2019, Updated February 27, 2020