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Search Publications by: Dazhen Gu (Fed)

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Displaying 51 - 75 of 142

Microwave Radiometry of Blackbody Radiation

August 11, 2016
Author(s)
Dazhen Gu
We outline the theoretical formulation of radiometry of the free-space radiation emitted by a blackbody target. Simulation shows a much smaller drop of radiation intensity of a Lambertian source than that of an incoherent source in the near-field region

Development of a NIST WR10 Radiometer

August 10, 2016
Author(s)
Jack T. Surek, Dazhen Gu, Dave K. Walker
— This paper describes the development of a waveguide radiometer to measure noise from millimeter wave electronic components across the full WR10 band from 75 GHz to 110 GHz. DUT noise temperature is estimated based on comparison with room temperature and

SIMULATIONS TO CHARACTERIZE A PASSIVE MICROWAVE BLACKBODY DESIGN

July 29, 2015
Author(s)
Derek A. Houtz, Dave K. Walker, Dazhen Gu
This paper discusses the design of a microwave blackbody to be used as a primary laboratory standard for passive remote sensing applications. The design is required to have excellent performance over the frequencies ranging from 10 GHz to 220 GHz and will

Microwave Measurements and Systematic Circuit-Model Extraction of Nanowire Metal Semiconductor Field Effect Transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model

Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model