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High frequency characterization of a Schottky contact to a GaN nanowire bundle

Published

Author(s)

Chin J. Chiang, Thomas M. Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford, Kichul Kim, Dejan Filipovic

Abstract

A GaN nanowire (NW) Schottky contact was characterized up to 10 GHz. Using a calibration procedure and circuit model a capacitance-voltage (CV) curve was obtained, from which a carrier concentration was calculated for the first time. These results demonstrate an alternative approach to characterize transport properties of nanowires and contacts.
Citation
Nano Letters
Volume
107
Issue
12

Keywords

coplanar waveguide (CPW), field effect transistors (FET), GaN nanowires, microwaves, Schottky barrier, two-port measurements

Citation

Chiang, C. , Wallis, T. , Gu, D. , Imtiaz, A. , Kabos, P. , Blanchard, P. , Bertness, K. , Sanford, N. , Kim, K. and Filipovic, D. (2010), High frequency characterization of a Schottky contact to a GaN nanowire bundle, Nano Letters, [online], https://doi.org/10.1063/1.3428391 (Accessed February 27, 2024)
Created June 16, 2010, Updated November 10, 2018