Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

High frequency characterization of a Schottky contact to a GaN nanowire bundle



Chin J. Chiang, Thomas M. Wallis, Dazhen Gu, Atif A. Imtiaz, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford, Kichul Kim, Dejan Filipovic


A GaN nanowire (NW) Schottky contact was characterized up to 10 GHz. Using a calibration procedure and circuit model a capacitance-voltage (CV) curve was obtained, from which a carrier concentration was calculated for the first time. These results demonstrate an alternative approach to characterize transport properties of nanowires and contacts.
Nano Letters


coplanar waveguide (CPW), field effect transistors (FET), GaN nanowires, microwaves, Schottky barrier, two-port measurements


Chiang, C. , Wallis, T. , Gu, D. , Imtiaz, A. , Kabos, P. , Blanchard, P. , Bertness, K. , Sanford, N. , Kim, K. and Filipovic, D. (2010), High frequency characterization of a Schottky contact to a GaN nanowire bundle, Nano Letters, [online], (Accessed June 19, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created June 16, 2010, Updated November 10, 2018