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Search Publications by David Gundlach

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Displaying 1 - 25 of 85

Higher Order Effects in Organic LEDs with Sub-bandgap Turn-on

Author(s)
Sebastian Engmann, Adam J. Barito, Emily G. Bittle, Chris Giebink, Lee J. Richter, David J. Gundlach
Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet- triplet annihilation could increase the performance for

Band offset and electron affinity of MBE-grown SnSe2

Author(s)
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its

Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

Author(s)
Quentin Smets, Jihong Kim, Jason P. Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning

Broadband Optical Properties of Graphene by Spectroscopic Ellipsometry

Author(s)
Wei Li, Nhan V. Nguyen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
The broadband (0.7 eV to 9.0 eV) optical properties of chemical-vapor-deposition (CVD) grown graphene are determined by spectroscopic ellipsometry. The optical

Morphological origin of charge transport anisotropy in aligned polythiophene thin films

Author(s)
Brendan T. O'Connor, Obadiah G. Reid, Xinran Zhang, Regis J. Kline, Lee J. Richter, David J. Gundlach, Dean M. DeLongchamp, Michael F. Toney, Nikos Kopidakis, Garry Rumbles
The morphological origin of anisotropic charge transport in uniaxially strain aligned poly(3-hexylthiophene) (P3HT) films is investigated. The macroscale field